Resin Composition for Etching Mask with Vertical Phase Separation

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Solution Overview

Problem

The existing technologies face challenges in forming a phase-separated structure with a period of less than 20 nm and achieving vertical orientation, especially when subjected to high-temperature annealing, which is necessary for creating accurate etching mask patterns with minimal defects.

Innovation Solution

A resin composition containing a block copolymer with specific constitutional units, including a first block and a second block, is applied to a substrate, where the second block consists of a polymer with a repeating structure of constitutional units represented by General Formula (b2g), allowing for phase separation and vertical orientation even at high temperatures.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Length of stationary object

If a block copolymer with higher molecular weight is used to increase the period (L0) of the phase-separated structure, then the period size increases, but the vertical orientation of the structure becomes difficult to achieve

Engineering Contradiction:

Improveperiod (L0) of phase-separated structureVSAvoidvertical orientation of phase-separated structure

Core Design Contradiction:

Length of stationary objectVSStability of the object's composition

Solution Approach 1:

The patent changes the chemical composition parameters of the block copolymer by introducing a polar group-containing block (block 2G) with specific functional groups (carboxy, amino, cyano, hydroxy, or phosphoric acid group). This compositional parameter change enables vertical orientation even at higher molecular weights where conventional block copolymers would fail to orient vertically.

Inventive Principle:

Principle #35Parameter changes

2Manufacturing precision

If high-temperature annealing is applied to reduce defects and improve pattern accuracy, then the etching mask pattern accuracy improves, but the vertical orientation of the phase-separated structure deteriorates

Engineering Contradiction:

Improveaccuracy of etching mask patternVSAvoidvertical orientation of phase-separated structure

Core Design Contradiction:

Manufacturing precisionVSStability of the object's composition

Solution Approach 1:

The patent introduces a block 2G containing polar groups (carboxy, amino, cyano, hydroxy, or phosphoric acid group) that provides thermal stability to the vertical orientation. This compositional parameter change allows the structure to maintain vertical orientation even when subjected to high-temperature annealing processes necessary for defect reduction and pattern accuracy improvement.

Inventive Principle:

Principle #35Parameter changes

3Reliability

If a block copolymer with larger interaction parameter (χ) is used to enhance phase separation performance, then the phase separation performance improves, but the vertical orientation at high film thickness becomes difficult to achieve

Engineering Contradiction:

Improvephase separation performanceVSAvoidvertical orientation at high film thickness

Core Design Contradiction:

ReliabilityVSStability of the object's composition

Solution Approach 1:

The patent creates a composite block copolymer structure combining a first block (styrene or styrene derivative), a second block (methyl methacrylate or its derivative), and a block 2G containing polar groups. This composite structure leverages the strong phase separation from the incompatible blocks while the polar groups in block 2G provide directional guidance for vertical orientation, achieving both high phase separation performance and vertical orientation at high film thickness.

Inventive Principle:

Principle #40Composite materials

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The method enables the formation of a phase-separated structure with excellent vertical orientation and a period of less than 20 nm, reducing defects and improving the accuracy of etching mask patterns.

Implementation Method 1

the block copolymer forms a structure body having a regular periodic structure by the phase separation

Methodology Applied

Scientific EffectPhase separation:

Implementation Method 2

a step of applying a resin composition for forming an etching mask pattern onto a support to form a layer containing a block copolymer

Methodology Applied

Scientific EffectDeposition: Deposition (physical)

Data Source

PatentUS20240360267A1Resin composition for forming etching mask pattern, and method for manufacturing etching mask pattern

Publication Date: 2024.10.31 TOKYO OHKA KOGYO CO LTD

AI summary

A resin composition for forming an etching mask pattern, with which a phase-separated structure having a period (L0) of less than 20 nm and having excellent vertical orientation even when subjected to high-temperature annealing can be obtained; and a method for manufacturing an etching mask pattern. The method includes applying the resin composition onto a support to form a block copolymer layer having a film thickness of 25 nm or more and phase-separating the block copolymer layer. The resin composition contains a block copolymer having a first block and a second block, the first block includes a structure of General Formula (b1), and the second block consists of a block 2M of a structure of General Formula (b2m) and a block 2G of a structure of General Formula (b2g), and y/(y+z) is 0.01 or more and 0.11 or less; R1 is an alkyl group, R2 is an alkyl group; and R3 is an alkylene group