Resin Composition for High-Resolution EUV Lithography
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Solution Overview
Problem
Current resist compositions face challenges in achieving high sensitivity, high resolution, and good dry etching resistance, particularly when forming isolated patterns using electron beams or EUV light, as they often compromise on one or more of these aspects due to issues like electron scattering and back scattering effects.
Innovation Solution
A radiation-sensitive resin composition is developed, incorporating specific repeating units that enhance sensitivity, resolution, and dry etching resistance, featuring a polycyclic aromatic structure and acid-decomposable groups, which are designed to improve the resin's properties when exposed to electron beams or EUV light.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the accelerating voltage of EB is increased to reduce forward scattering, then the resolution is improved, but the electron energy trapping ratio is reduced and sensitivity decreases
Solution Approach 1:
The patent changes the chemical composition parameters of the resist resin by incorporating specific polycyclic aromatic structures (naphthalene, anthracene, phenanthrene units) to optimize electron energy trapping efficiency at high accelerating voltages, thereby maintaining sensitivity while achieving high resolution
Solution Approach 2:
The patent uses composite resin structures combining polycyclic aromatic units with specific side chains (formula 1-4) to create a material that simultaneously provides high electron energy trapping ratio and good etching resistance, resolving the contradiction between sensitivity and resolution
2Manufacturing precision
If the accelerating voltage of EB is increased to reduce forward scattering, then the resolution is improved, but back scattering effect increases and isolated pattern resolution decreases
Solution Approach 1:
The patent converts the harmful back scattering effect into a beneficial phenomenon by using the polycyclic aromatic structures to trap scattered electrons within the resist film, preventing them from reaching the substrate and causing damage, thereby maintaining isolated pattern resolution
Solution Approach 2:
The patent modifies the resist composition parameters by incorporating specific aromatic structures that increase electron stopping power, reducing the penetration depth of back-scattered electrons and minimizing their harmful effects on isolated patterns
3Manufacturing precision
If the resist film is formed as a thin film to achieve ultrafine pattern, then the resolution is improved, but the dry etching resistance is impaired
Solution Approach 1:
The patent changes the chemical structure parameters of the resist by incorporating polycyclic aromatic units with high carbon content and specific bonding structures that provide both thin-film compatibility and enhanced dry etching resistance through increased chemical stability
Solution Approach 2:
The patent creates a composite resin structure combining polycyclic aromatic cores with carefully designed side chains that provide etching resistance while maintaining film thickness, achieving both ultrafine pattern capability and sufficient etching protection
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition effectively forms patterns with high sensitivity, resolution, and dry etching resistance, even for isolated patterns, by optimizing the resin's structure to minimize electron scattering and enhance acid generation upon irradiation.
Implementation Method 1
S1 represents a structural moiety capable of decomposing upon irradiation with an actinic ray or radiation to generate an acid in the side chain
Implementation Method 2
the effect of electron scattering in the resist film, that is, forward scattering, is reduced by increasing the accelerating voltage of EB
Data Source
AI summary
An actinic ray-sensitive or radiation-sensitive resin composition comprising (P) a resin having a repeating unit represented by the following formula (1), a resist film using the composition, and a pattern forming method.