Radiation-Sensitive Resin Composition for EUV Lithography
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Solution Overview
Problem
Current radiation-sensitive resin compositions for semiconductor device photolithography fail to achieve adequate sensitivity, critical dimension uniformity (CDU), and resolution, especially with the micronization of patterns using short wavelength radiation or immersion exposure methods.
Innovation Solution
A radiation-sensitive resin composition incorporating a resin with a structural unit A, a radiation-sensitive acid generator, and a solvent, where the structural unit A contains a phenolic hydroxyl group and an acid-dissociable group, enhancing energy absorption and contrast between exposed and unexposed areas, and a method for forming a pattern by applying this composition to a substrate, exposing it, and developing it with a developer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional radiation-sensitive resin compositions are used with short wavelength radiation or immersion exposure methods, then pattern micronization is attempted, but sensitivity, critical dimension uniformity (CDU), and resolution are insufficient
Solution Approach 1:
The patent changes the chemical parameters of the resin composition by incorporating specific structural units (Formula 1) with phenolic hydroxyl groups and acid-dissociable groups, and using radiation-sensitive acid generators (Formulae 2-1 and 2-2) to optimize the photochemical reaction efficiency and solubility contrast, thereby improving sensitivity and CDU while achieving pattern micronization
Solution Approach 2:
The patent creates a composite radiation-sensitive resin composition by combining multiple components: resins with specific structural units (Formula 1), radiation-sensitive acid generators (Formulae 2-1 and 2-2), and solvents. This composite approach synergistically improves sensitivity, CDU, and resolution beyond what single components can achieve
2Use of energy by moving object
If styrene-based resin with enhanced radiation absorption efficiency is used, then shorter wavelength radiation can be absorbed, but adequate sensitivity and resolution are not achieved
Solution Approach 1:
The patent modifies the resin structure by incorporating specific structural units (Formula 1) that contain both phenolic hydroxyl groups for radiation absorption and acid-dissociable groups for solubility enhancement, optimizing the balance between radiation absorption efficiency and pattern formation quality to achieve adequate sensitivity and resolution
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition exhibits improved sensitivity, CDU performance, and resolution, enabling the formation of high-quality resist patterns with next-generation exposure technologies, such as EUV or electron beams, by synergistically combining the effects of phenolic hydroxyl and acid-dissociable groups.
Implementation Method 1
generating an acid by irradiating the coating of the resist composition with a radioactive ray
Implementation Method 2
irradiating the coating of the resist composition with a radioactive ray through a mask pattern
Implementation Method 3
a resin including a structural unit A... containing a phenolic hydroxyl group... enhancing energy absorption
Implementation Method 4
reacting in the presence of the acid as a catalyst to generate the difference of solubility of a resin into an alkaline or organic developer between an exposed part and a non-exposed part
Data Source
AI summary
A radiation-sensitive resin composition includes: a resin containing a structural unit A represented by formula (1); at least one radiation-sensitive acid generator selected from the group consisting of a radiation-sensitive acid generator represented by formula (2-1) and a radiation-sensitive acid generator represented formula (2-2); and a solvent. At least one R3 is an acid-dissociable group; and R41 is a hydrogen atom or a protective group to be deprotected by action of an acid. At least one of Rf1 and Rf2 is a fluorine atom or a fluoroalkyl group; R5a is a monovalent organic group having a cyclic structure; X1+ is a monovalent onium cation; R5b is a monovalent organic group, and X2+ is a monovalent onium cation whose atom having a positive charge is not an atom forming a cyclic structure.