Resin Composition for Ion Implantation Masking
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Solution Overview
Problem
Ion leakage occurs during high-energy ion implantation in the semiconductor substrate, affecting the sensitivity of infrared light receiving portions in solid-state imaging elements, as existing resist compositions fail to effectively suppress ion transmission through the mask.
Innovation Solution
An actinic ray-sensitive or radiation-sensitive resin composition is developed, incorporating a resin with an acid-decomposable group, a photoacid generator, and an additive with a low melting point or glass transition temperature, which forms a dense pattern to prevent ion leakage, specifically designed for use in ion implantation steps for manufacturing solid-state imaging elements.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Length of stationary object
If a thick film pattern is used for high-energy ion implantation, then the film thickness is increased, but ion leakage occurs through the mask
Solution Approach 1:
The patent changes the chemical composition parameters of the resist film by incorporating specific resin components (polycarbonate, polyacrylate) and additives (polyethylene glycol, polypropylene glycol) in controlled ratios. This compositional parameter change enables the film to achieve both sufficient thickness (5-15 μm) and adequate ion blocking capability, resolving the contradiction between film thickness and ion leakage prevention.
Solution Approach 2:
The patent creates a composite resist material system combining multiple resin components with specific molecular weight ranges and functional groups. The composite structure integrates the masking function of the thick film with the ion-blocking function of the additive components, achieving both thick film formation and effective ion leakage suppression simultaneously.
2Length of moving object
If ion implantation energy is increased to achieve deep impurity implantation, then the implantation depth is increased, but ion leakage through the mask worsens
Solution Approach 1:
The patent modifies the physical-chemical parameters of the resist material, specifically the glass transition temperature and molecular weight distribution of the resin components. These parameter changes enable the resist film to maintain structural integrity and blocking capability even when subjected to high-energy ion implantation that achieves deep implantation depths.
Solution Approach 2:
The additive components (polyethylene glycol, polypropylene glycol) act as intermediary substances within the resist film structure. They serve as a mediating layer that absorbs and dissipates ion energy while preventing ion transmission through the mask, enabling deep implantation without compromising mask integrity.
3Length of stationary object
If a positive-tone resist composition is used to form thick patterns, then the film thickness is increased, but the resist composition fails to suppress ion transmission
Solution Approach 1:
The patent transforms the conventional positive-tone resist composition into a composite material system that includes both the resist components for pattern formation and additive components for ion blocking. This composite structure maintains the thick film-forming capability while adding the critical function of ion transmission suppression.
Solution Approach 2:
The patent creates a multi-functional resist composition that simultaneously performs pattern formation (positive-tone resist function) and ion leakage suppression (mask function). The additive components provide this additional functionality without interfering with the primary resist performance, achieving universal application in both lithography and ion implantation processes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition effectively suppresses ion leakage, ensuring sufficient sensitivity to infrared rays by forming a dense pattern that prevents ion transmission, thereby enhancing the performance of light receiving portions in solid-state imaging elements.
Implementation Method 1
a photoacid generator; and an additive having a melting point or glass transition temperature of lower than 25° C. and a molecular weight of 180 or more
Implementation Method 2
an additive having a melting point or glass transition temperature of lower than 25° C. and a molecular weight of 180 or more
Data Source
AI summary
An actinic ray-sensitive or radiation-sensitive resin composition for forming a pattern used as a mask in an ion implanting, including a resin including a repeating unit having an acid-decomposable group, a photoacid generator, and an additive having a melting point or glass transition temperature of lower than 25° C. and a molecular weight of 180 or more, in which a content of the additive is 1% by mass or more with respect to a total solid content in the composition.