Radiation-Sensitive Resin Composition for Lithography CDU

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Solution Overview

Problem

Current radiation-sensitive resin compositions for microfabrication in lithography face challenges in achieving high sensitivity to exposure light, Critical Dimension Uniformity (CDU) performance, and resolution, particularly with the increasing demands of miniaturization in resist patterns.

Innovation Solution

A radiation-sensitive resin composition comprising a polymer whose solubility in a developer solution is altered by an acid, a radiation-sensitive acid generator, and a compound represented by a specific formula, which includes a monovalent radiation-sensitive onium cation, a halogen atom, and aromatic hydrocarbon groups, enhancing sensitivity and CDU performance.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If conventional radiation-sensitive resin compositions are used, then basic lithography functionality is achieved, but sensitivity to exposure light and CDU performance are insufficient for advanced miniaturization

Engineering Contradiction:
ImproveCDU performance and resolutionVSAvoidsensitivity to exposure light
Core Design Contradiction:
Manufacturing precisionVSReliability

Solution Approach 1:

The patent employs a composite resin composition incorporating specific polymer compounds with defined molecular structures containing aromatic hydrocarbon rings and halogen atoms, combined with radiation-sensitive acid generators. This composite approach enables simultaneous achievement of high sensitivity to exposure light and superior CDU performance by leveraging the synergistic effects of different functional components.

Inventive Principle:
Principle #40Composite materials

Solution Approach 2:

The patent optimizes molecular parameters of the polymer components, including aromatic ring sizes (6-30 ring atoms), halogen atom positions, and chain lengths (a and b values), to achieve precise control over acid diffusion and solubility characteristics. These parameter adjustments enable enhanced sensitivity and CDU performance required for advanced lithography applications.

Inventive Principle:
Principle #35Parameter changes

2Manufacturing precision

If polymer components with altered solubility are used to achieve pattern formation, then resist pattern formation is enabled, but sensitivity and CDU performance remain insufficient

Engineering Contradiction:
Improveresist pattern formation qualityVSAvoidsensitivity to exposure light
Core Design Contradiction:
Manufacturing precisionVSProductivity

Solution Approach 1:

The patent introduces compounds with specific local molecular structures containing aromatic hydrocarbon rings with halogen atoms at defined positions. These localized structural features create specific interaction sites that enhance acid diffusion control and solubility contrast, thereby improving both pattern formation quality and sensitivity to exposure light simultaneously.

Inventive Principle:
Principle #3Local quality

3Manufacturing precision

If existing acid generators are used, then acid generation upon irradiation occurs, but the composition fails to meet superior CDU and resolution requirements

Engineering Contradiction:
ImproveCDU and resolutionVSAvoidsensitivity to exposure light
Core Design Contradiction:
Manufacturing precisionVSQuantity of substance

Solution Approach 1:

The patent modifies the molecular parameters of the resin composition by incorporating compounds with specific aromatic ring structures (6-30 ring atoms) and controlled halogen substitution patterns. These parameter changes optimize the interaction between acid generators and the polymer matrix, enabling superior acid diffusion control and enhanced sensitivity to achieve both high CDU and resolution.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The composition enables the formation of resist patterns with improved sensitivity to exposure light and superior CDU and resolution, suitable for advanced microfabrication processes such as semiconductor device manufacturing.

Implementation Method 1

A radiation-sensitive resin composition for use in microfabrication by lithography generates an acid at light-exposed regions upon an irradiation with a radioactive ray, e.g., an electromagnetic wave such as a far ultraviolet ray such as an ArF excimer laser beam (wavelength of 193 nm), a KrF excimer laser beam (wavelength of 248 nm), etc. or an extreme ultraviolet ray (EUV) (wavelength of 13.5 nm), or a charged particle ray such as an electron beam.

Methodology Applied
Scientific EffectPhotoelectric Effect: Photoelectric Effect

Implementation Method 2

A chemical reaction in which the acid serves as a catalyst causes a difference between the light-exposed regions and light-unexposed regions in rates of dissolution in a developer solution, whereby a resist pattern is formed on a substrate.

Methodology Applied
Scientific EffectChemical reaction catalysis: Catalysis

Data Source

PatentUS20230236501A1Radiation-sensitive resin composition, method of forming resist pattern, and compound
Publication Date: 2023.07.27 JSR CORPORATION
  • US20230236501A1 patent drawing
  • US20230236501A1 patent drawing
  • US20230236501A1 patent drawing

AI summary

A radiation-sensitive resin composition includes: a polymer, solubility of which in a developer solution is capable of being altered by an action of an acid; a radiation-sensitive acid generator; and a compound represented by formula (1). Ar1 represents a group obtained by removing (a+b+2) hydrogen atoms from an aromatic hydrocarbon ring having 6 to 30 ring atoms; R1 represents a halogen atom or a monovalent organic group having 1 to 20 carbon atoms; L1 represents a divalent linking group; R2 represents a substituted or unsubstituted monovalent aromatic hydrocarbon group having 6 to 20 carbon atoms; a is an integer of 0 to 10, b is an integer of 1 to 10, wherein a sum of a and b is no greater than 10; and X+ represents a monovalent radiation-sensitive onium cation.