Radiation-Sensitive Resin Composition for Lithography
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Solution Overview
Problem
Current resist pattern-forming methods face challenges in achieving high resolution and maintaining lithographic properties such as exposure latitude, depth of focus, critical dimension uniformity, and mask error enhancement factor due to issues like substance elution and refractive index changes in liquid immersion lithography, which deteriorate the resist film and lens surface.
Innovation Solution
A resist pattern-forming method using a radiation-sensitive resin composition comprising an acid-labile group-containing polymer and a photoacid generator, developed with an organic solvent of 80 mass% or more, which controls the contrast value γ between 5.0 and 30.0, improving sensitivity and lithographic properties like exposure latitude, depth of focus, and critical dimension uniformity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If liquid immersion lithography is used to achieve high resolution, then resolution is improved, but resist film deterioration occurs due to substance elution and lens contamination
Solution Approach 1:
The patent changes the chemical composition parameters of the resist film by incorporating specific compounds (compounds 1-6) that modify the resist's interaction with the immersion medium. This prevents substance elution while maintaining high resolution, thus resolving the contradiction between resolution improvement and resist film reliability
Solution Approach 2:
The patent creates a composite resist system by combining polymer (A) with specific compounds (1-6) and photoacid generators. This composite structure provides both the high resolution needed for liquid immersion lithography and the chemical stability to prevent elution and lens contamination
2Reliability
If resist composition is changed to increase hydrophobicity to prevent elution, then elution is reduced, but lithographic properties deteriorate
Solution Approach 1:
The patent applies local quality by having different components serve different functions: the polymer matrix provides hydrophobicity to prevent elution, while the specifically designed compounds (1-6) embedded within it maintain the lithographic properties. This localized functional differentiation resolves the contradiction between elution resistance and lithographic performance
3Manufacturing precision
If fine resist pattern with 90 nm line width is formed using short-wavelength radiation, then resolution is improved, but further miniaturization becomes difficult
Solution Approach 1:
The patent changes the optical parameters of the resist system by incorporating compounds that enhance the resist's response to ArF excimer laser radiation. This enables further miniaturization beyond 90 nm line width by improving the resolution capability of the existing wavelength, thus resolving the contradiction between current resolution achievement and future miniaturization potential
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method achieves improved sensitivity and lithographic performance by controlling the contrast value γ, enhancing exposure latitude, depth of focus, and critical dimension uniformity, making it suitable for further miniaturization of semiconductor devices.
Implementation Method 1
a photoacid generator which is excellent in sensitivity
Data Source
Figure 1
AI summary
A radiation-sensitive resin composition that is used to form a resist pattern using a developer that includes an organic solvent in an amount of 80 mass% or more, includes (A) an acid-labile group-containing polymer, and (B) a photoacid generator, and has a contrast value γ of 5.0 to 30.0, the contrast value γ being calculated from a resist dissolution contrast curve obtained when developing the radiation-sensitive resin composition using the organic solvent. The organic solvent is preferably at least one organic solvent selected from the group consisting of alkyl carboxylates having 3 to 7 carbon atoms and dialkyl ketones having 3 to 10 carbon atoms.