Resin Composition for Semiconductor Lithography DOF and LWR
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Solution Overview
Problem
Current resist compositions used in semiconductor manufacturing fail to meet the required levels of depth of focus (DOF) and line width roughness (LWR) for advanced electronic equipment, necessitating the development of a new active-light-sensitive or radiation-sensitive resin composition with improved properties.
Innovation Solution
The composition includes a resin with specific repeating units, such as those represented by General Formulae (1) and (2), which do not have a protected hydroxyadamantyl group, allowing for efficient acid diffusion and improved DOF and LWR, and can be used in both negative and positive type development with organic or alkali developers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional resist compositions are used, then manufacturing process is simple, but depth of focus (DOF) is insufficient and line width roughness (LWR) is high
Solution Approach 1:
The patent changes the chemical structure parameters of the resin by specifying repeating units with particular molecular configurations (Formula 1 and Formula 2) and controlling the absence of protected hydroxyadamantyl groups. This structural parameter change improves acid diffusion properties, resulting in high DOF and low LWR while maintaining manufacturing simplicity
Solution Approach 2:
The patent creates a composite resin composition by combining specific repeating units (p1 and p2) with acid generators and optional additives. This composite structure achieves superior patterning performance with high DOF and low LWR without significantly complicating the manufacturing process
2Manufacturing precision
If conventional resist compositions are used, then composition structure is simple, but line width roughness (LWR) is high
Solution Approach 1:
The patent modifies the molecular parameters of the resin by defining specific repeating units (Formula 1 and Formula 2) and controlling the absence of protected hydroxyadamantyl groups. This parameter optimization enhances acid diffusion uniformity, reducing line width roughness while keeping the composition structure manageable
3Manufacturing precision
If resin with protected hydroxyadamantyl group is used, then acid diffusion is hindered, but DOF and LWR characteristics are poor
Solution Approach 1:
The patent extracts the problematic protected hydroxyadamantyl group from the resin structure. By specifically excluding this group from the repeating units, the patent eliminates the barrier to acid diffusion, enabling high precision pattern formation without unnecessarily complex molecular structures
Data Source
AI summary
The present invention has an object to provide an active-light-sensitive or radiation-sensitive resin composition having high DOF and low LWR; a pattern forming method using the composition; and a method for manufacturing an electronic device. The active-light-sensitive or radiation-sensitive resin composition of the present invention includes a resin P and a compound that generates an acid upon irradiation with active light or radiation, in which the resin P has a repeating unit p1 and a repeating unit p2 represented by specific formulae, and the repeating unit p2 does not have a group in which a hydroxy group of a hydroxyadamantyl group is protected with a group that decomposes by the action of an acid to leave.