Radiation-Sensitive Resin Composition for Lithography
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Solution Overview
Problem
Current photolithography technologies face challenges in achieving high sensitivity, critical dimension uniformity (CDU), and line width roughness (LWR) performance, particularly with the micronization of patterns using short-wavelength radiation such as ArF excimer lasers or electron beams, where existing resist compositions fail to provide uniformity and precision in resist pattern formation.
Innovation Solution
A radiation-sensitive resin composition incorporating an onium salt compound, a resin with an acid-dissociable group, and a solvent, which acts as a quencher to control acid diffusion, enhancing sensitivity and pattern uniformity by moderating the basicity of the anion moiety and suppressing the diffusion length of the compound, thereby improving resist performances.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a photosensitive quencher is blended in a resist composition to capture diffused acid through ion exchange reaction, then lithographic performance is improved, but the composition complexity increases
Solution Approach 1:
The patent modifies the chemical parameters of the resist composition by introducing a specific onium salt compound with controlled basicity and diffusion characteristics. The compound's molecular structure is designed to optimize its quenching ability while maintaining composition simplicity, resolving the contradiction between performance improvement and complexity increase.
2Manufacturing precision
If short-wavelength radiation is used to promote micronization of patterns, then pattern resolution is improved, but sensitivity and uniformity of resist patterns deteriorate
Solution Approach 1:
The onium salt compound acts as an intermediary substance that mediates between the short-wavelength radiation and the resist film. It controls the diffusion of acid generated during exposure, ensuring uniform acid distribution even when using high-resolution short-wavelength radiation sources like ArF excimer lasers or electron beams.
Solution Approach 2:
The patent changes the chemical parameters of the resist system by incorporating the onium salt compound, which modifies the acid diffusion behavior and enhances the uniformity of resist pattern formation when using short-wavelength radiation, thereby maintaining reliability while achieving high resolution.
3Reliability
If acid diffusion is allowed to improve lithographic performance, then sensitivity is improved, but critical dimension uniformity deteriorates
Solution Approach 1:
The patent optimizes the diffusion parameters of acid through the onium salt compound, which has specific basicity and diffusion characteristics. This controlled approach allows sufficient acid diffusion to maintain sensitivity while preventing excessive diffusion that would harm critical dimension uniformity, achieving a balanced optimization of both parameters.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition achieves excellent sensitivity, CDU, and LWR performance, enabling the formation of high-quality resist patterns with improved uniformity and precision, particularly suitable for next-generation lithography technologies using shorter wavelengths.
Implementation Method 1
an acid diffused to a non-exposed part is captured by an ion exchange reaction
Implementation Method 2
generating an acid by irradiating the coating of the resist composition with a radioactive ray through a mask pattern
Data Source
AI summary
A radiation-sensitive resin composition contains: an onium salt compound represented by formula (1); a resin containing a structural unit having an acid-dissociable group; and a solvent. R1 is a substituted or unsubstituted monovalent organic group having a cyclic structure, or a chain hydrocarbon group having 2 or more carbon atoms. X is an oxygen atom, a sulfur atom, or —NRα—. Rα is a hydrogen atom or a monovalent hydrocarbon group having 1 to 10 carbon atoms. Z+ is a monovalent onium cation.