Resin Composition for Lithography Line Width Roughness
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Solution Overview
Problem
Current pattern forming methods for semiconductor and circuit board production face challenges in achieving excellent line width roughness and exposure latitude, particularly with the use of ArF excimer lasers and EUV lithography, due to difficulties in finding suitable combinations of resist compositions, developers, and rinsing liquids.
Innovation Solution
A pattern forming method using an actinic-ray-sensitive or radiation-sensitive resin composition with 65 mol % or more of a repeating unit that generates a polar group upon acid degradation, combined with a developer containing an organic solvent, and optionally including a hydrophobic resin with fluorine or silicon atoms, for improved dissolution contrast and exposure performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a conventional resist composition is used with ArF excimer laser or EUV lithography, then exposure can be performed, but line width roughness deteriorates and exposure latitude is insufficient
Solution Approach 1:
The patent changes the chemical composition parameters of the resist material by incorporating specific repeating units with acid-degradable groups that generate polar groups. This compositional parameter change enables superior line width roughness and exposure latitude performance with ArF and EUV lithography
Solution Approach 2:
The patent uses a composite resin composition containing multiple types of repeating units (acid-degradable groups, polar groups, and specific structural units) combined in defined proportions. This composite material approach achieves both low line width roughness and high exposure latitude that cannot be obtained with conventional single-component resist materials
2Manufacturing precision
If aqueous alkaline developer is used, then development can be performed, but dissolution contrast is insufficient leading to poor pattern quality
Solution Approach 1:
The patent changes the developer composition parameter from aqueous alkaline to organic solvent-based, which provides significantly higher dissolution contrast for the acid-degradable groups in the resist composition, enabling superior pattern quality
Solution Approach 2:
The organic solvent acts as an intermediary that enhances the dissolution contrast between exposed and unexposed portions of the resist film, enabling better pattern definition than aqueous developers can achieve
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method enhances line width roughness and exposure latitude by increasing dissolution contrast between exposed and unexposed portions, leading to more precise and stable pattern formation.
Implementation Method 1
a repeating unit having a group which generates a polar group by being degraded by the action of an acid
Implementation Method 2
a photoacid-generating agent that is included in an exposed portion in a resist composition is degraded by being irradiated with light and generates an acid
Data Source
AI summary
Provided is a pattern forming method that is excellent in roughness performance such as line width roughness and exposure latitude, and an actinic-ray-sensitive or radiation-sensitive resin composition and a resist film used for the pattern forming method.The pattern forming method includes (1) forming a film using an actinic-ray-sensitive or radiation-sensitive resin composition containing a resin that includes 65 mol % or more of a repeating unit having a group which generates a polar group by being degraded by the action of an acid based on all repeating units in the resin and at least one kind of repeating unit represented by the following General Formula (I) or (II), (2) exposing the film, and (3) developing the exposed film using a developer that contains an organic solvent.