Radiation-Sensitive Resin Composition for Low LWR and Pattern Collapse
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Solution Overview
Problem
Current radiation-sensitive resin compositions face challenges in achieving low line width roughness (LWR), preventing pattern collapse, and maintaining a sufficient amount of residual resist film, especially as line widths narrow, leading to unsatisfactory etching performance due to reduced film thickness and increased pattern aspect ratio.
Innovation Solution
A radiation-sensitive resin composition comprising a polymer component with specific structural units, a radiation-sensitive acid generating agent, and a nitrogen-containing compound with a ring structure, which allows for improved dissociability of acid-dissociable groups, controlled acid diffusion, and enhanced solubility, enabling lower post-exposure baking temperatures and increased residual resist film.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the line width of the resist pattern is narrowed to achieve higher resolution, then the resolving ability is improved, but the aspect ratio of the resist pattern becomes larger and the pattern becomes more prone to collapse
Solution Approach 1:
The patent uses a composite polymer system comprising a first polymer with specific alicyclic hydrocarbon groups (for etching resistance and structural integrity) and a second polymer with carboxylic acid groups (for solubility control and pattern definition). This composite structure enables narrow line widths while maintaining pattern stability through the synergistic effects of the different polymer components.
Solution Approach 2:
The patent optimizes multiple parameters including the molecular weight ratios of the polymers (first polymer 5-50% by weight, second polymer 50-95% by weight), the composition of alicyclic hydrocarbon groups, and the acid dissociation constants to achieve the desired balance between resolution and pattern collapse resistance.
2Productivity
If the film thickness of the resist coating film is reduced to enable further miniaturization, then the productivity is improved, but the amount of residual resist film becomes insufficient and etching performance deteriorates
Solution Approach 1:
The patent adjusts the film thickness parameters and polymer composition ratios to optimize the balance between miniaturization and etching performance. The specific composition of alicyclic hydrocarbon groups and carboxylic acid content are tuned to maintain sufficient residual resist film even at reduced thicknesses.
Solution Approach 2:
The composite polymer system provides enhanced etching resistance through the alicyclic hydrocarbon-containing first polymer while the carboxylic acid-containing second polymer ensures proper pattern formation, enabling thin films to maintain sufficient residual resist for effective etching.
3Manufacturing precision
If conventional radiation-sensitive resin compositions are used, then the basic resist formation function is maintained, but the LWR (line width roughness) cannot be sufficiently reduced and the limit dimension for pattern collapse is not low enough
Solution Approach 1:
The patent employs a composite polymer system where the first polymer with alicyclic hydrocarbon groups provides structural rigidity and etching resistance, while the second polymer with carboxylic acid groups controls solubility and pattern definition. This composite structure simultaneously achieves low LWR and low limit dimension for pattern collapse.
Solution Approach 2:
The patent introduces specific alicyclic hydrocarbon groups at strategic positions within the polymer structure to provide localized structural support and etching resistance where needed, while maintaining overall pattern solubility and definition through the carboxylic acid-containing polymer segments.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition achieves excellent LWR features, a low limit dimension for pattern collapse, and a large amount of residual resist film, improving etching performance and process stability while maintaining resolution and storage stability.
Implementation Method 1
Chemically amplified radiation-sensitive resin compositions generate an acid upon irradiation with an electron beam or far ultraviolet ray typified by a KrF excimer laser or ArF excimer laser at a light-exposed site
Implementation Method 2
a chemical reaction that proceeds with an aid of the acid as a catalyst allows the difference in dissolution rates in developing solutions to be produced between the light-exposed site and the light-unexposed site
Data Source
AI summary
A radiation-sensitive resin composition includes a polymer component, a radiation-sensitive acid generating agent, and a nitrogen-containing compound having a ring structure. The polymer component includes, in an identical polymer or different polymers, a first structural unit represented by a formula (1) and a second structural unit represented by a formula (2). R1 represents a hydrogen atom or a methyl group. Z is a group which represents a divalent monocyclic alicyclic hydrocarbon group taken together with R2. R2 represents a carbon atom. R3 represents a methyl group or an ethyl group. R4 represents a hydrogen atom or a methyl group. X is a group which represents a divalent bridged alicyclic hydrocarbon group having no less than 10 carbon atoms taken together with R5. R5 represents a carbon atom. R6 represents a branched alkyl group having 3 or 4 carbon atoms.