Radiation-Sensitive Resin Composition for Sub-40nm LWR and Sensitivity
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Solution Overview
Problem
Current radiation-sensitive resin compositions face challenges in achieving optimal sensitivity to exposure light and Line Width Roughness (LWR) performance and resolution, particularly at line widths below 40 nm, which are essential for advanced microfabrication and semiconductor device miniaturization.
Innovation Solution
A radiation-sensitive resin composition comprising a polymer with a phenolic hydroxyl group, a specific acid generating agent, and an acid diffusion control agent, formulated to enhance sensitivity and LWR performance, includes compounds represented by specific chemical formulas that improve exposure light absorption and acid generation efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional radiation-sensitive resin compositions are used, then manufacturing process is simple, but sensitivity to exposure light and LWR performance deteriorate at line widths below 40 nm
Solution Approach 1:
The patent employs a composite resin composition containing multiple polymer types (polymer A with phenolic hydroxyl groups, polymer B with carboxylic acid groups), acid generating agents, and specific additives in defined weight ratios. This composite approach combines the advantages of different materials to achieve both high sensitivity and superior LWR performance at sub-40nm line widths, resolving the contradiction between manufacturing precision and device complexity.
Solution Approach 2:
The patent optimizes specific parameter ranges including the weight ratios of polymers (10-70 wt% polymer A, 5-60 wt% polymer B), acid generating agent content (1-50 wt%), and molecular weight parameters (Mw/Mn ratios). By precisely controlling these parameters within defined ranges, the composition achieves enhanced sensitivity and LWR performance without excessive complexity.
2Use of energy by moving object
If sensitivity to exposure light is increased, then LWR performance may deteriorate, but both are required for advanced microfabrication
Solution Approach 1:
The patent introduces polymers with specific local functional groups (phenolic hydroxyl groups in polymer A, carboxylic acid groups in polymer B) that perform distinct roles. The phenolic hydroxyl groups enhance sensitivity to exposure light through specific photochemical reactions, while the carboxylic acid groups contribute to LWR performance by controlling acid diffusion and polymer solubility. This local functional differentiation allows simultaneous optimization of both sensitivity and LWR performance.
Solution Approach 2:
The patent uses acid generating agents as intermediaries that convert exposure light energy into chemical changes. These agents absorb exposure light and generate acids that catalyze polymer reactions, serving as a mediator between the exposure light and the polymer matrix. This intermediary mechanism enables efficient energy transfer while maintaining controlled acid diffusion for superior LWR performance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition enables the formation of resist patterns with improved sensitivity to exposure light and superior LWR performance and resolution, making it suitable for future semiconductor device miniaturization and fine pattern formation in lithography processes.
Implementation Method 1
A radiation-sensitive resin composition for use in microfabrication by lithography generates an acid at a light-exposed region upon an irradiation with a radioactive ray, e.g., an electromagnetic wave such as a far ultraviolet ray such as an ArF excimer laser beam (wavelength of 193 nm), a KrF excimer laser beam (wavelength of 248 nm), etc. or an extreme ultraviolet ray (EUV) (wavelength of 13.5 nm), or a charged particle ray such as an electron beam
Implementation Method 2
A chemical reaction in which the acid serves as a catalyst causes a difference in rates of dissolution in a developer solution between light-exposed regions and light-unexposed regions, whereby a resist pattern is formed on a substrate
Data Source
AI summary
A radiation-sensitive resin composition includes a polymer including a phenolic hydroxyl group, a compound represented by formula (1-1) or formula (1-2), and a compound represented by formula (2). In the formula (1-1), a sum of a, b, and c is no less than 1; at least one of R1, R2, and R3 represents a fluorine atom or the like; and R4 and R5 each independently represent a hydrogen atom, a fluorine atom, or the like. In the formula (1-2), in a case in which d is 1, R6 represents a fluorine atom or the like, and in a case in which d is no less than 2, at least one of the plurality of R6s represents a fluorine atom or the like; and R8 represents a single bond or a divalent organic group having 1 to 20 carbon atoms.