Radiation-Sensitive Resin Composition for Fine Pattern Formation
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Solution Overview
Problem
Current photolithography technologies face challenges in achieving superior sensitivity, LWR performance, and CD margin performance for fine circuit formation in semiconductor devices, particularly with the micronization of patterns using short-wavelength radiation and immersion exposure methods.
Innovation Solution
A radiation-sensitive resin composition comprising a resin with a specific structural unit, a radiation-sensitive acid generator, and a solvent, which enhances pattern formation by improving sensitivity and LWR performance, and includes a method of forming a resist pattern by applying the composition to a substrate, exposing it to light, and developing the resist film.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If short-wavelength radiation or immersion exposure method is used to promote pattern micronization, then manufacturing precision is improved, but sensitivity and LWR performance deteriorate
Solution Approach 1:
The patent modifies the chemical composition parameters of the resist material by incorporating specific structural units (formula 1) with controlled ratios of halogen atoms, hydroxy groups, and other functional groups. This chemical parameter change enables the resist to maintain high sensitivity and LWR performance while achieving fine pattern micronization with short-wavelength radiation
Solution Approach 2:
The patent creates a composite resin structure by combining multiple structural units (formula 1) with different functional groups (halogen atoms, hydroxy groups, alkoxy groups) in specific proportions. This composite approach allows the resist to simultaneously achieve pattern precision, sensitivity, and LWR performance that cannot be obtained with single-component materials
2Reliability
If resist composition is optimized for sensitivity, then sensitivity is improved, but LWR performance and CD margin performance worsen
Solution Approach 1:
The patent applies local quality by distributing different functional groups within the resist molecular structure at controlled densities. Halogen atoms provide sensitivity enhancement at specific locations, while hydroxy and alkoxy groups provide LWR control at other locations, achieving balanced performance through spatial distribution of functional properties
Solution Approach 2:
The patent precisely controls the molar ratios of different structural units in formula (1) to optimize the balance between sensitivity and LWR performance. By adjusting the concentration of halogen-containing groups versus hydroxy/alkoxy groups, the resist achieves simultaneous improvement in both sensitivity and LWR characteristics
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition achieves superior sensitivity, LWR performance, and CD margin performance, enabling high-quality resist pattern formation with improved lithographic performance and pattern rectangularity.
Implementation Method 1
generating an acid by irradiating a coating film of the resist composition with radiation through a mask pattern
Implementation Method 2
reacting in the presence of the acid as a catalyst to generate a difference in the solubility of a resin into an alkaline or organic developer between an exposed area and an unexposed area
Implementation Method 3
a resin including a structural unit represented by formula (1)... at least one R3 is a halogen atom or a halogenated hydrocarbon group
Data Source
AI summary
A radiation-sensitive resin composition includes: a resin including a structural unit represented by formula (1); a radiation-sensitive acid generator; and a solvent. R1 is a hydrogen atom, a fluorine atom, a methyl group, or a trifluoromethyl group; L1 represents a single bond or —COO-L-; L represents a substituted or unsubstituted alkanediyl group; R2 represents a monovalent hydrocarbon group having 1 to 20 carbon atoms; L2 represents a single bond or a divalent linking group; and Ar represents a group obtained by removing (n+1) hydrogen atoms from an aromatic ring. R3 is independently a halogen atom, a halogenated hydrocarbon group, a hydroxy group, a monovalent hydrocarbon group having 1 to 10 carbon atoms, or a monovalent alkyl ether group having 1 to 10 carbon atoms, and at least one R3 is a halogen atom or a halogenated hydrocarbon group.