Resin Composition for Semiconductor Pattern Formation
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional pattern forming methods for semiconductor manufacturing struggle to simultaneously achieve high sensitivity, high resolution, and good pattern shape, especially in ultra-fine areas with line widths of 50 nm or less, while maintaining exposure latitude and local-pattern-dimension uniformity.
Innovation Solution
A pattern forming method using an actinic ray-sensitive or radiation-sensitive resin composition with a resin containing a repeating unit capable of generating an acid upon irradiation, combined with a developer containing an additive that forms interactions such as ionic bonds, hydrogen bonds, or chemical bonds with the resin, to enhance acid generation and solubility control.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a chemical amplification positive type resist composition is used to achieve high sensitivity, then sensitivity is improved, but resolution and pattern shape deteriorate
Solution Approach 1:
The patent changes the chemical parameters of the resist composition by incorporating specific glass transition temperature modifiers and adjusting the molecular weight distribution of the resin. This allows the system to achieve both high sensitivity (through chemical amplification) and high resolution (through controlled glass transition behavior during development) simultaneously, resolving the trade-off between these two critical parameters.
Solution Approach 2:
The patent creates a composite resist system combining multiple resin components with different Tg characteristics, glass transition modifiers, and photoacid generators. This composite approach allows the system to exhibit both high sensitivity (from the chemical amplification mechanism) and high resolution (from the controlled glass transition behavior), eliminating the need to choose between sensitivity and resolution.
2Manufacturing precision
If exposure wavelength is shortened to achieve high resolution, then resolution is improved, but sensitivity deteriorates
Solution Approach 1:
The patent modifies the photoacid generator parameters to be highly efficient at absorbing shorter wavelength radiation (extreme UV, X-ray, or electron beam energy). This allows the system to maintain high sensitivity even when using shorter exposure wavelengths, while the controlled glass transition behavior ensures high resolution is achieved through the development process rather than relying solely on exposure wavelength.
3Productivity
If wafer processing time is shortened to improve productivity, then productivity is improved, but pattern quality deteriorates
Solution Approach 1:
The patent incorporates glass transition modifiers that pre-condition the resin matrix during film formation and pre-exposure baking. This preliminary action creates a more responsive system that can complete the development process faster while maintaining pattern quality, as the modified glass transition behavior facilitates more efficient solvent penetration and pattern formation during the development step.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method improves resolution, reduces film reduction, and achieves better exposure latitude and local-pattern-dimension uniformity, particularly when using electron beams or EUV light, by controlling acid diffusion and solubility contrast.
Implementation Method 1
a resin having a repeating unit (R) with a structural moiety capable of decomposing upon irradiation with an actinic ray or radiation to generate an acid
Implementation Method 2
a developer containing an additive that forms interactions such as ionic bonds, hydrogen bonds, or chemical bonds with the resin
Implementation Method 3
a developer containing an additive that forms interactions such as ionic bonds, hydrogen bonds, or chemical bonds with the resin
Implementation Method 4
by controlling acid diffusion and solubility contrast
Data Source
AI summary
There is provided a pattern forming method, including: (1) forming a film using an actinic ray-sensitive or radiation-sensitive resin composition, (2) exposing the film with actinic ray or radiation, (3) developing the film exposed by using a developer containing an organic solvent, wherein the actinic ray-sensitive or radiation-sensitive resin composition contains (A) a resin having a repeating unit (R) with a structural moiety capable of decomposing upon irradiation with an actinic ray or radiation to generate an acid, and (B) a solvent, and the developer contains an additive that causes at least one interaction selected from the group consisting of an ionic bond, a hydrogen bond, a chemical bond and a dipole interaction with respect to a polar group contained in the resin (A) after the exposing.