Resin Composition for Semiconductor Pattern Formation
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Solution Overview
Problem
Current pattern forming methods for semiconductor manufacturing face challenges in achieving excellent post-exposure baking temperature dependence and density dependence using existing actinic ray-sensitive or radiation-sensitive resin compositions, particularly with developers containing organic solvents.
Innovation Solution
A pattern forming method utilizing a resin with increased polarity that decreases solubility in organic solvent developers, combined with a compound capable of generating acid upon irradiation, and an onium salt to enhance the process, along with specific solvents like ketones, esters, alcohols, or amides for development.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a positive type chemical amplification method is used with a water-based alkaline developer, then the exposed area is removed to obtain a desired pattern, but it is very difficult to discover appropriate combinations of resins, photoacid generators, basic compounds, additives, and solvents that satisfy both excellent post exposure heating temperature dependence and density dependence
Solution Approach 1:
The patent changes the fundamental parameter of the development system from water-based alkaline developer to organic solvent-based developer. This parameter change enables the use of resist compositions with specific resin and photoacid generator combinations that achieve both excellent PEB temperature dependence and density dependence, which were difficult to obtain with conventional water-based systems
Solution Approach 2:
The patent employs a composite resist composition containing specific combinations of resins (such as polyhydroxystyrene derivatives), photoacid generators (such as sulfonium salts), and organic solvent developers. This composite approach allows the system to achieve multiple performance requirements simultaneously that cannot be met with single-component systems
2Adaptability or versatility
If conventional positive type resists are used, then patterns can be formed with current mainstream methods, but patterns which are hardly formed with current positive type resists cannot be created
Solution Approach 1:
The patent inverts the conventional approach by using organic solvent-based developers instead of water-based alkaline developers. This inversion enables negative type development and allows formation of pattern configurations (such as lines, trenches, and holes) that are difficult or impossible to achieve with conventional positive type resists
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method achieves high degrees of post-exposure baking temperature and density dependence, improving the formation of precise patterns in semiconductor manufacturing.
Implementation Method 1
a compound capable of generating an acid upon irradiation with actinic ray or radiation
Implementation Method 2
a resin which has an increase in the polarity by the action of an acid, and thus, has a decrease in the solubility in a developer containing an organic solvent
Data Source
AI summary
The present invention relates to a pattern forming method including:forming a film using an actinic ray-sensitive or radiation-sensitive resin composition that includes a (A) resin which has an increase in the polarity by the action of an acid, and thus, has a decrease in the solubility in a developer containing an organic solvent, a (B) compound capable of generating an acid upon irradiation with specific actinic ray or radiation, and a (C) solvent,exposing the film, anddeveloping the exposed film using a developer including an organic solvent, in whichthe resin (A) has a structure in which a polar group is protected with a leaving group which decomposes to leave by the action of an acid, and the leaving group is a group represented by the following General Formula (I).