Resin Composition Temperature Control for Film Uniformity
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Solution Overview
Problem
Existing actinic ray-sensitive or radiation-sensitive resin compositions face challenges in achieving uniform film thickness, particularly in thick film formations, which affects the quality of semiconductor devices during lithography processes.
Innovation Solution
A method for producing an actinic ray-sensitive or radiation-sensitive resin composition with a viscosity of 10 mPa·s or more, involving specific temperature control and stirring conditions using an inert gas to maintain a stable liquid temperature and prevent solvent volatilization, ensuring excellent in-plane uniformity of film thickness.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional resin compositions are used for thick film formation, then sensitivity and cross-sectional shape are improved, but in-plane uniformity of film thickness deteriorates
Solution Approach 1:
The patent applies parameter changes by controlling the liquid temperature of the resin composition during application to be 25°C or lower, and adjusting the viscosity to 10 mPa·s or higher. These parameter modifications resolve the contradiction by enabling uniform thick film formation while maintaining pattern formation quality, as the lower temperature prevents solvent volatilization and the higher viscosity ensures proper flow characteristics during coating
2Manufacturing precision
If resin composition viscosity is increased to improve film uniformity, then in-plane uniformity is improved, but application difficulty increases
Solution Approach 1:
The patent resolves this contradiction by optimizing the viscosity parameter to 10 mPa·s or higher, which is sufficiently high to ensure uniform film formation but not so high as to prevent proper application. The controlled temperature condition (25°C or lower) works synergistically with this viscosity level to maintain both operability and uniformity
3Productivity
If stirring is performed without temperature control, then mixing efficiency is improved, but solvent volatilization occurs reducing film uniformity
Solution Approach 1:
The patent applies the inert atmosphere principle by conducting stirring operations in an environment where the liquid temperature is controlled to be 25°C or lower. This temperature control creates a stable environment that prevents solvent volatilization during mixing, allowing efficient stirring to proceed without compromising film uniformity
Solution Approach 2:
The patent resolves this contradiction by controlling the liquid temperature parameter during stirring to be 25°C or lower. This temperature control prevents solvent volatilization that would otherwise occur during vigorous mixing, thereby maintaining both mixing efficiency and film uniformity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method results in an actinic ray-sensitive or radiation-sensitive resin film with extremely excellent in-plane uniformity, enhancing the quality of thick film formations and improving the manufacturing process for semiconductor devices.
Implementation Method 1
the control of the liquid temperature in the stirring tank in the step 2 is performed by passing an inert gas through the stirring tank
Implementation Method 2
a liquid temperature in the stirring tank is controlled to be equal to or lower than a 3.0° C. higher temperature than a liquid temperature at a start of the step 2 throughout the entire step 2
Data Source
AI summary
A method for producing an actinic ray-sensitive or radiation-sensitive resin composition having a viscosity of 10 mPa·s or more, the method containing a step 1 of charging at least a resin of which polarity increases by an action of an acid, a photoacid generator, and a solvent as raw materials into a stirring tank, and a step 2 of stirring the raw materials in the stirring tank. A liquid temperature in the stirring tank is controlled to be equal to or lower than a 3.0° C. higher temperature than a liquid temperature at a start of the step 2 throughout the entire step 2, and the control of the liquid temperature in the stirring tank in the step 2 is performed by passing an inert gas through the stirring tank.