Resin Composition for Etching Mask Vertical Orientation
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Solution Overview
Problem
Existing methods struggle to form phase-separated structures with vertical orientation and high film thickness suitable for etching mask patterns, particularly as film thickness increases, limiting their application in advanced microfabrication techniques.
Innovation Solution
A resin composition comprising a block copolymer with specific constitutional units and a homopolymer of less than 3,000 number-average molecular weight, where the block copolymer includes a first block and a second block with a random copolymer structure, and a homopolymer with a repeating structure, optimized to achieve vertical orientation and high film thickness for etching mask patterns.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Length of stationary object
If the film thickness is increased to achieve high film thickness for etching mask patterns, then the film thickness is improved, but the vertical orientation of phase-separated structures deteriorates
Solution Approach 1:
The invention uses a composite resin composition containing both a block copolymer (for phase-separated structure formation) and a specific homopolymer (for vertical orientation control). This composite approach allows the system to achieve both high film thickness and maintained vertical orientation, resolving the contradiction between film thickness and orientation stability.
Solution Approach 2:
The invention changes the chemical composition parameters of the resin system by selecting specific homopolymers with particular glass transition temperatures and molecular weights. By adjusting these parameters, the system maintains vertical orientation even at increased film thicknesses, overcoming the limitation of conventional single-component systems.
2Ease of manufacture
If conventional resin compositions are used, then the manufacturing process is simple, but the ability to form vertically oriented phase-separated structures with high film thickness is insufficient
Solution Approach 1:
The patent employs a composite resin system combining block copolymer and homopolymer components. This composite material approach enhances the vertical orientation formation capability without significantly complicating the manufacturing process, as the components are simply mixed and applied together in a single coating step.
3Strength
If the molecular weight of the homopolymer is increased, then the film strength is improved, but the vertical orientation capability deteriorates
Solution Approach 1:
The invention optimizes the molecular weight parameter of the homopolymer to be less than 3,000, which is a specific parameter setting that balances film strength and vertical orientation capability. This parameter optimization resolves the contradiction by finding the optimal value that satisfies both requirements simultaneously.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables the formation of phase-separated structures with excellent vertical orientation and high film thickness, suitable for use as etching mask patterns, enhancing the resolution and reliability of microfabrication processes.
Implementation Method 1
the block copolymer forms a structure body having a regular periodic structure by the phase separation
Implementation Method 2
self-organized nanostructures, which are formed by micro-phase separation
Implementation Method 3
micro-phase separation, only in a specific region and arrange the nanostructures in a desired direction
Data Source
AI summary
A resin composition for forming an etching mask pattern containing a block copolymer having a first block and a second block, and a homopolymer having a number-average molecular weight of less than 3,000. The first block is a polymer of a constitutional unit represented by Formula (b1) and the second block is a random copolymer of a constitutional unit represented by Formula (b2m) and a constitutional unit represented by Formula (b2g). The proportion of the volume of the first block is 20% to 80% by volume. The homopolymer includes a polymer of the constitutional unit represented by Formula (b1). In the formulas illustrated below, R1 is an alkyl group, Rb1 is a hydrogen atom or a methyl group, n is an integer of 0 to 5, R2 is an alkyl group, R3 is an alkylene group, Rb2 is a hydrogen atom or the like, and x is more than 0 and less than 1


