Resin Composition for Resist Pattern CD Uniformity
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Solution Overview
Problem
Existing resist compositions fail to achieve satisfactory CD uniformity in resist patterns.
Innovation Solution
A resin comprising specific structural units, including those represented by formulas (a1-5) and (I), along with optional structural units like (a1-1), (a1-2), and (a2-A), combined with an acid generator and a salt, is used in a resist composition. The process involves application, drying, exposure, heating, and development to form a resist pattern with improved CD uniformity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional resist compositions are used, then the manufacturing process is simple, but the CD uniformity of the resist pattern is insufficient
Solution Approach 1:
The patent uses a composite resin structure comprising multiple specific structural units (formula a1-5, formula I, and optionally formula a1-1, a1-2, or a2-A) in defined proportions. This composite approach combines different functional units to achieve both high CD uniformity and controlled etch resistance, resolving the contradiction between manufacturing precision and structural complexity by creating a synergistic material system.
Solution Approach 2:
The patent optimizes specific parameters including the molar ratios of different structural units (a1-5: 1-80 mol%, I: 15-80 mol%, a1-1/a1-2: 1-50 mol%, a2-A: 1-50 mol%), the acid generator type and amount, and processing conditions (prebake temperature 80-150°C, exposure wavelength 193nm). These parameter changes enable achievement of CD uniformity of 0.5 nm or more while maintaining etch resistance.
2Strength
If higher etch resistance is achieved through resin modification, then etch resistance improves, but CD uniformity may deteriorate
Solution Approach 1:
The patent introduces structural unit a2-A containing hydroxyl groups at specific locations within the resin chain (1-50 mol%). These hydroxyl groups provide localized hydrogen bonding capability that enhances etch resistance in specific regions while the overall copolymer structure maintains uniformity. This local quality modification allows simultaneous improvement of etch resistance and CD uniformity.
Solution Approach 2:
The patent carefully controls the amount of hydroxyl-containing structural unit a2-A at 1-50 mol% and adjusts the prebake temperature to 80-150°C to optimize hydrogen bonding. These parameter changes enable the resin to achieve etch resistance comparable to chemically amplified resins while maintaining superior CD uniformity of 0.5 nm or more.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The resist composition effectively produces resist patterns with enhanced CD uniformity, improving the resolution and adhesion to substrates.
Implementation Method 1
a step of exposing the composition layer, and (4) a step of heating the exposed composition layer
Implementation Method 2
a step of heating the exposed composition layer
Data Source
AI summary
Disclosed is a resin including a structural unit represented by formula (a1-5) and a structural unit represented by formula (I), and a resist composition:wherein Ra8 represents an alkyl group which may have a halogen atom, a hydrogen atom or a halogen atom; Za1 represents a single bond or *—(CH2)h3—CO-L54-; h3 represents an integer of 1 to 4; L51, L52, L53 and L54 each independently represent —O— or —S—; s1 represents an integer of 1 to 3; s1′ represents an integer of 0 to 3; R1 represents a hydrogen atom or a methyl group; A1 represents a single bond or *—CO—O—; R2 represents a halogen atom, a hydroxy group, a haloalkyl group or an alkyl group; mi represents an integer of 1 to 3; and ni represents an integer of 0 to 4, in which mi+ni≤5.