Resin Composition for Resist Pattern CD Uniformity

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Solution Overview

Problem

Existing resist compositions fail to achieve satisfactory CD uniformity in resist patterns.

Innovation Solution

A resin comprising specific structural units represented by formulas (I) and (a2-A), combined with an acid generator and optionally other structural units, is used to form a resist composition that includes a salt represented by formula (B1), which is applied, dried, exposed, heated, and developed to produce a resist pattern with improved CD uniformity.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If conventional resist compositions are used, then the manufacturing process is simple, but the CD uniformity of the resist pattern is insufficient

Engineering Contradiction:
ImproveCD uniformityVSAvoidresin structure complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent applies composite materials by combining multiple specific structural units (formula I, a2-A, and optionally a1-1 or a1-2) into a single resin system. This composite structure integrates different functional components: formula I provides the base polymer structure, formula a2-A contributes to solubility and reactivity control, and formula a1-1 or a1-2 enhances pattern formation properties. The synergistic combination achieves superior CD uniformity that cannot be obtained by single structural units alone.

Inventive Principle:
Principle #40Composite materials

Solution Approach 2:

The patent applies local quality by optimizing specific regions of the resin molecule. Formula I provides a uniform base structure, while formula a2-A introduces localized functional groups that control solubility and reactivity at specific sites. The optional formula a1-1 or a1-2 units provide localized enhancements for pattern formation. This spatial differentiation of functional properties within the resin structure enables precise control over resist performance and CD uniformity.

Inventive Principle:
Principle #3Local quality

2Manufacturing precision

If existing resin structures are used, then the synthesis process is straightforward, but the resist pattern quality and resolution are inadequate

Engineering Contradiction:
Improvepattern resolutionVSAvoidresin synthesis difficulty
Core Design Contradiction:
Manufacturing precisionVSEase of manufacture

Solution Approach 1:

The patent applies parameter changes by precisely controlling the compositional parameters of the resin. The specific definitions of formula I, a2-A, and a1-1 or a1-2 with their respective substituent options create a tunable parameter space. By adjusting the types and ratios of these structural units, the resin can be optimized for different pattern resolution requirements while maintaining manageable synthesis through well-defined chemical structures and standard polymerization methods.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The resist composition effectively produces a resist pattern with enhanced CD uniformity, improving the resolution and quality of the pattern.

Implementation Method 1

a step of exposing the composition layer, and (4) a step of heating the exposed composition layer

Methodology Applied
Scientific EffectPhotochemical reaction: Photopolymerisation

Data Source

PatentUS11500288B2Resin, resist composition and method for producing resist pattern
Publication Date: 2022.11.15 SUMITOMO CHEM CO LTD
  • US11500288B2 patent drawing
  • US11500288B2 patent drawing
  • US11500288B2 patent drawing

AI summary

Disclosed is a resin including a structural unit represented by formula (I) and a structural unit represented by formula (a2-A), and a resist composition:wherein R1 represents a hydrogen atom or a methyl group; L1 and L2 each represent —O— or —S—; s1 represents an integer of 1 to 3; s2 represents an integer of 0 to 3; Ra50 represents a hydrogen atom, a halogen atom, or an alkyl group which may have a halogen atom; Ra51 represents a halogen atom, a hydroxy group, an alkyl group, an alkoxy group, an alkylcarbonyl group or the like; Aa50 represents a single bond or *—Xa51-(Aa52-Xa52)nb—; Aa52 represents an alkanediyl group; Xa51 and Xa52 each represent —O—, —CO—O— or —O—CO—; nb represents 0 or 1; and mb represents an integer of 0 to 4.