Resin Solution for Semiconductor Alpha Particle Protection

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Solution Overview

Problem

Conventional methods for forming a polyimide layer on semiconductor devices require high temperatures above 280°C for cross-linking, which can lead to deficiencies and reduced yield, and do not effectively protect against alpha particles that degrade the reliability of semiconductor memory devices.

Innovation Solution

A resin solution comprising an organic solvent and a resol or novolac resin, combined with a cross-linking agent, photo active compound, and development accelerator, which allows for the formation of a cured resin layer at lower temperatures (120°C to 250°C) and provides protection against alpha particles through selective exposure and development.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a polyimide layer is formed using conventional methods with polyamic acid and organic solvent, then a protection layer can be formed, but the cross-linking reaction requires temperatures above 280°C which can create deficiencies in semiconductor devices and reduce yield

Engineering Contradiction:
Improveprotection layer formationVSAvoidbaking temperature
Core Design Contradiction:
ReliabilityVSTemperature

Solution Approach 1:

The patent changes the chemical parameters of the resin system from polyamic acid to phenolic resin (resol or novolac type), which fundamentally alters the cross-linking reaction characteristics. This parameter change enables cross-linking to occur at lower temperatures (150-250°C) while maintaining the protective function of the layer, thus resolving the contradiction between forming a reliable protection layer and avoiding high temperature damage to semiconductor devices

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent employs composite material strategies by combining phenolic resin with specific organic solvents and cross-linking agents. This composite approach creates a resin solution that achieves effective cross-linking at lower temperatures, simultaneously providing the protection layer formation capability while reducing the baking temperature requirement compared to conventional polyimide systems

Inventive Principle:
Principle #40Composite materials

2Temperature

If the baking temperature is reduced to below 280°C to avoid device deficiencies, then device reliability is improved, but the cross-linking reaction of polyamic acid cannot occur effectively

Engineering Contradiction:
Improvebaking temperatureVSAvoidcross-linking reaction
Core Design Contradiction:
TemperatureVSReliability

Solution Approach 1:

The patent changes the chemical nature of the resin from polyamic acid to phenolic resin, which has inherently different reactivity characteristics. Phenolic resins can undergo cross-linking at lower temperatures through condensation reactions, eliminating the need for high-temperature processing while ensuring effective cross-linking occurs, thus resolving the contradiction between low temperature processing and effective cross-linking

Inventive Principle:
Principle #35Parameter changes

3Reliability

If conventional polyimide layers are used to protect semiconductor devices, then some protection is provided, but they are not effective against alpha particles that penetrate and degrade device reliability

Engineering Contradiction:
Improveprotection against alpha particlesVSAvoidmanufacturing process
Core Design Contradiction:
ReliabilityVSEase of manufacture

Solution Approach 1:

The patent changes the material composition from polyimide to phenolic resin, which provides superior protection against alpha particles. This material parameter change maintains ease of manufacture through similar application methods (coating and baking) while significantly improving the protective capability against alpha particle penetration, thus resolving the contradiction between enhanced protection and manufacturing simplicity

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution enables the formation of a reliable protection layer at lower temperatures, reducing semiconductor device deficiencies and enhancing the reliability of memory devices by effectively blocking alpha particles, thus improving the yield and performance of semiconductor fabrication.

Implementation Method 1

A cross-link reaction must occur between the organic solvent and the polyamic acid to form the polyimide layer

Methodology Applied
Scientific EffectCross-linking reaction: Chemical Bonding

Implementation Method 2

selective exposure and development

Methodology Applied
Scientific EffectPhotolysis: Photodissociation

Data Source

PatentUS7528188B2Resin solution and method of forming a protection layer
Publication Date: 2009.05.05 SAMSUNG ELECTRONICS CO LTD
  • US7528188B2 patent drawing
  • US7528188B2 patent drawing
  • US7528188B2 patent drawing

AI summary

A resin solution usable for forming a protection layer, including an organic solvent and a resol resin. The resin solution may further include any combination of a cross-linking agene or agent(s), a photo active compound (PAC) or compounds(s), and/or development accelerator or accelerator(s) a method forming a cured resin layer, including applying a resin solution, including a resol resin, directly or indirectly on a substrate and hard baking the resin solution to form the cured resin layer. The resin solution may include a resol resin and/or a novolac resin.