Radiation-Sensitive Resin Composition for Sub-40nm Resist Patterning
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Solution Overview
Problem
Current radiation-sensitive resin compositions face challenges in achieving high resolution, depth of focus, and exposure latitude for microfabrication of electronic device structures, particularly in forming resist patterns with line widths less than 40 nm.
Innovation Solution
A radiation-sensitive resin composition incorporating a polymer with an acid-labile group and a radiation-sensitive acid generating agent containing a sulfonate anion with two or more rings and a monovalent group including an iodine atom and oxygen or nitrogen atoms, which enhances sensitivity and control of acid diffusion.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional radiation-sensitive resin compositions are used, then basic resist pattern formation is achieved, but resolution and manufacturing precision deteriorate for line widths less than 40 nm
Solution Approach 1:
The patent modifies the chemical structure of the acid generating agent by incorporating a sulfonate anion with two or more rings and specific substituents (iodine atom and monovalent group with O or N atoms). This structural parameter change enhances the acid generation efficiency and controls acid diffusion, thereby improving resolution while maintaining process yield for sub-40nm patterning
Solution Approach 2:
The radiation-sensitive resin composition employs a composite system combining a polymer with acid-labile groups and a specially designed radiation-sensitive acid generating agent. This composite material approach allows synergistic effects where the polymer provides structural framework and the acid generating agent enables precise acid generation, achieving both high resolution and reliability
2Productivity
If sensitivity is increased to improve exposure latitude, then depth of focus deteriorates
Solution Approach 1:
The patent adjusts the molecular parameters of the acid generating agent, specifically using a sulfonate anion with two or more rings and controlled substituent groups. This parameter optimization enables balanced acid generation characteristics that provide both high sensitivity for exposure latitude and sufficient depth of focus for precise patterning
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition demonstrates improved sensitivity, depth of focus, and exposure latitude, enabling the formation of precise resist patterns suitable for advanced semiconductor and microfabrication processes.
Implementation Method 1
generates an acid in a light-exposed region upon irradiation with exposure light, e.g., a far ultraviolet ray such as an ArF excimer laser, an extreme ultraviolet ray (EUV), or an electron beam
Implementation Method 2
cause by a catalytic action of the acid a difference in a rate of dissolution in a developer solution between the light-exposed region and a light-unexposed region
Data Source
AI summary
A radiation-sensitive resin composition contains: a polymer that includes a structural unit including an acid-labile group; and a radiation-sensitive acid generating agent. The radiation-sensitive acid generating agent includes a sulfonate anion and a radiation-sensitive cation. The sulfonate anion includes two or more rings, and an iodine atom and a monovalent group having 0 to 10 carbon atoms which includes at least one of an oxygen atom and a nitrogen atom bond to at least one of the two or more rings. The ring is preferably an aromatic ring. The radiation-sensitive acid generating agent is preferably a compound represented by formula (1). In the formula (1), A1 represents a group obtained from a compound which includes a ring having 3 to 20 ring atoms by removing (p+q+r+1) hydrogen atoms on the ring.