Radiation-Sensitive Resin Composition for Sub-45nm Resist Patterns
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Solution Overview
Problem
Current radiation-sensitive resin compositions face challenges in achieving superior resolution, rectangularity of resist patterns, and depth of focus, especially at line widths below 45 nm, with existing polymer structures not adequately addressing the need for improved Line Width Roughness (LWR) performance and film contraction control during post-exposure baking.
Innovation Solution
A radiation-sensitive resin composition comprising a polymer with an acid-labile group, a radiation-sensitive acid generator, and a compound represented by a specific formula, which includes an oxygen or sulfur atom, monovalent organic groups, and a cation with a valency of 1 to 3, along with a solvent, to enhance acid diffusion control and pattern formation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional polymer structures are used in radiation-sensitive resin compositions, then the basic resist pattern formation can be achieved, but the resolution, rectangularity, and Line Width Roughness (LWR) performance are insufficient for line widths below 45 nm
Solution Approach 1:
The patent changes the chemical structure parameters of the polymer by introducing specific functional groups (carboxyl groups, hydroxyl groups, carboxymethyl groups) and controlling their content ratios. This structural parameter change enables the resin composition to achieve superior resolution, rectangularity, and LWR performance for sub-45nm line widths while maintaining reliable pattern formation.
Solution Approach 2:
The patent creates a composite resin composition by combining multiple polymer components with different functional groups (carboxyl-containing polymers, hydroxyl-containing polymers, carboxymethyl-containing polymers) in specific ratios. This composite approach integrates the advantages of each component to achieve the required manufacturing precision and reliability simultaneously.
2Manufacturing precision
If existing polymer structures are used, then the resist pattern can be formed with basic accuracy, but the depth of focus is insufficient for advanced microfabrication
Solution Approach 1:
The patent optimizes the concentration parameters of specific functional groups (carboxyl groups at 0.1-10 mmol/g, hydroxyl groups at 0.1-10 mmol/g, carboxymethyl groups at 0.1-10 mmol/g) within the polymer structure. This parameter optimization enhances the depth of focus by controlling acid generation and diffusion characteristics without requiring excessive structural complexity.
3Stability of the object's composition
If conventional resin compositions are used, then the basic resist formation is possible, but film contraction during post-exposure baking cannot be sufficiently inhibited
Solution Approach 1:
The patent introduces specific functional groups (carboxyl, hydroxyl, carboxymethyl) as intermediary elements that mediate between the radiation-sensitive components and the film matrix. These groups control acid diffusion and inhibit film contraction during post-exposure baking, thereby maintaining pattern accuracy while preventing detrimental film shrinkage.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition achieves reduced LWR, improved resolution, and superior rectangularity of resist patterns with enhanced depth of focus and inhibitory properties against film contraction, suitable for advanced microfabrication processes like semiconductor device manufacturing.
Implementation Method 1
An exposure of the same generates the acid in light-exposed regions upon irradiation with exposure light such as e.g., a far ultraviolet ray such as an ArF excimer laser, an extreme ultraviolet ray (EUV) or an electron beam to produce a difference in a rate of dissolution in a developer solution between the light-exposed regions and light-unexposed regions through a catalytic action of the acid
Implementation Method 2
a compound represented by formula (1)... to enhance acid diffusion control and pattern formation
Data Source
AI summary
A radiation-sensitive resin composition contains: a polymer having an acid-labile group, a radiation-sensitive acid generator, a compound represented by the following formula (1), and a solvent. In the formula (1), X represents an oxygen atom or a sulfur atom; R1 represents a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms; R2 to R5 each independently represent a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms, and optionally two or more of R2 to R5 taken together represent an alicyclic structure having 3 to 20 ring atoms or an aliphatic heterocyclic structure having 3 to 20 ring atoms together with the carbon atom to which the two or more of R2 to R5 bond; Zn+ represents a cation having a valency of n; and n is an integer of 1 to 3.