Resist Composition with Acid-Decomposable Units for EUV Lithography
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Solution Overview
Problem
Current resist compositions face challenges in achieving high sensitivity and resolution for forming fine resist patterns, particularly when exposed to extreme ultraviolet rays (EUV) or electron beams, as they tend to have adverse effects on lithography properties.
Innovation Solution
A resist composition containing a polymer compound with specific structural units, including a hydroxystyrene skeleton and an acid-decomposable group, is developed, where the structural unit derived from (α-substituted) acrylic acid or its derivative is controlled to improve lithography properties.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If a chemically amplified resist composition is used to improve sensitivity and resolution, then lithography properties are enhanced, but the formation of fine resist patterns under EUV or electron beam exposure deteriorates
Solution Approach 1:
The patent changes the chemical parameters of the base resin by incorporating specific structural units (acid-decomposable groups, lactone-containing cyclic groups, and polar groups) that modify the resin's response to acid generation during exposure. This allows the resist to maintain high sensitivity while improving the shape fidelity of fine patterns formed under EUV or electron beam exposure
Solution Approach 2:
The patent creates a composite base resin structure by combining multiple functional units within the same polymer chain: acid-decomposable groups (for solubility change), lactone-containing cyclic groups (for structural stability), and polar groups (for enhanced developing properties). This composite structure resolves the contradiction between sensitivity and pattern shape
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The new resist composition enhances lithography properties, allowing for the formation of resist patterns with improved shape and limit resolution, addressing the limitations of existing compositions when used with EUV or electron beams.
Implementation Method 1
an acid generator component which generates an acid upon exposure
Implementation Method 2
a structural unit including an acid-decomposable group which is decomposed by the action of an acid generated from the acid generator or the like so as to increase the polarity
Data Source
AI summary
A resist composition which generates an acid upon exposure and whose solubility on a developing solution changes under the action of the acid, including a polymer compound having units represented by formulas (a0-1), (a0-2), and (a0-3) in an amount of 0 to 10 mol %. In the formulas, R is a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a halogenated alkyl group having 1 to 5 carbon atoms, Va01 and Va03 are a divalent hydrocarbon group, na01 and na03 each are an integer of 0 to 2, Ra0″ is a specific acid dissociable group, Va02 is a divalent linking group containing a hetero atom or a single bond, Ra07 is a monovalent organic group, na021 is an integer of 0 to 3, and na022 is an integer of 1 to 3.