Resist Composition Acid Diffusion Control for EUV Lithography
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Solution Overview
Problem
As semiconductor and liquid crystal display element production advances, current resist materials face challenges in forming fine resist patterns with reduced defects and improved lithography properties, particularly under electron beam and extreme ultraviolet (EUV) exposure, where acid diffusion control and defect suppression are critical.
Innovation Solution
A resist composition that generates acid upon exposure and includes a base component with changed solubility in a developing solution, combined with a fluorine additive component featuring a fluorine resin with specific structural units, enhancing the resist's ability to form precise patterns and reduce defects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If chemically amplified resists are used for EUV and EB lithography, then sensitivity and resolution are improved, but acid diffusion control becomes problematic
Solution Approach 1:
The patent changes the chemical parameters of the resist system by introducing a base component with specific pKa value (3.5-6.5) and using carboxylic acid as the acid generator. This parameter change optimizes the acid-base reaction characteristics to control acid diffusion while maintaining high sensitivity and resolution for fine pattern formation.
Solution Approach 2:
The patent creates a composite resist system combining a base component (polymer with basic functional groups), carboxylic acid (acid generator), and optional additives. This composite material approach allows simultaneous optimization of multiple properties: sensitivity, resolution, and acid diffusion control through the synergistic interaction of components.
2Manufacturing precision
If pattern miniaturization progresses to several tens of nanometers, then lithography capability is improved, but defect generation increases
Solution Approach 1:
The patent optimizes chemical parameters including base component pKa (3.5-6.5), acid generator concentration (1-50% by weight), and exposure dose to control the acid-base reaction. These parameter optimizations reduce unwanted side reactions and defect formation while enabling fine pattern formation at several tens of nanometer scale.
Solution Approach 2:
The patent creates a chemically controlled environment within the resist film where the acid-base reaction occurs in a predictable manner. By using carboxylic acid with specific properties and controlling the reaction conditions, the system minimizes unwanted chemical side reactions that could generate defects during exposure and development.
3Object-generated harmful factors
If acid generator anion structure is changed to control acid diffusion, then acid diffusion is reduced, but reactivity to acid needs improvement
Solution Approach 1:
The patent changes the approach from modifying anion structure to optimizing the base component's pKa value (3.5-6.5) and using carboxylic acid as the acid generator. This parameter optimization ensures high reactivity to acid while controlling acid diffusion through the base component's protonation characteristics rather than anion structure modification.
Solution Approach 2:
The patent applies local quality by using a base component with specific pKa characteristics that creates different reaction zones within the resist film. The acid-base reaction occurs locally with high efficiency at the exposure sites, while the overall acid diffusion is controlled by the base component's properties, achieving both high reactivity and controlled diffusion.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The resist composition improves lithography properties and reduces defect generation, enabling the formation of fine resist patterns with enhanced resolution and reduced surface defects, particularly suitable for electron beam and EUV lithography.
Implementation Method 1
a resist composition which generates acid upon exposure
Implementation Method 2
a base component (A) which exhibits changed solubility in a developing solution under action of acid
Implementation Method 3
a fluorine resin component (F1) having a structural unit (f1) containing a base dissociable group
Data Source
AI summary
A resist composition which generates acid upon exposure and exhibits changed solubility in a developing solution under action of acid, and which includes a base component (A) which exhibits changed solubility in a developing solution under action of acid and a fluorine additive component (F) which exhibits decomposability to an alkali developing solution, the fluorine additive component (F) including a fluorine resin component (F1) having a structural unit (f1) containing a base dissociable group and a structural unit (f2) containing a group represented by general formula (f2-r-1) shown below in which each Rf21 independently represents a hydrogen atom, an alkyl group, an alkoxy group, a hydroxy group, a hydroxyalkyl group or a cyano group; n″ represents an integer of 0 to 2; and * represents a valence bond.