Resist Composition Acid Diffusion Control for Fine Patterns
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Solution Overview
Problem
Conventional resist compositions face challenges in forming fine patterns with good shape and reduced roughness, particularly in semiconductor and liquid crystal display element production, where pattern miniaturization requires high resolution and uniformity, and are prone to pattern collapse and inadequate space width uniformity.
Innovation Solution
A resist composition that includes a base component and a compound represented by general formula (d1), which generates acid upon exposure and exhibits changed solubility in a developing solution, improving acid diffusion control and lithography properties, allowing for the formation of fine patterns with reduced roughness and enhanced depth of focus.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional resist compositions are used for pattern miniaturization, then lithography processes can be performed, but the formed patterns exhibit poor shape, high roughness, and pattern collapse
Solution Approach 1:
The patent introduces a novel compound (D1) with specific molecular structure parameters (general formula (d1) with parameters m, n, p, q, and specific R group configurations) to modify the acid diffusion characteristics. This parameter change in the resist composition enables precise control over acid diffusion distance, resulting in patterns with reduced roughness (30 nm or less) and improved shape fidelity without collapse
Solution Approach 2:
The patent creates a composite resist composition by combining compound (D1) with base resin and acid generator in specific proportions. This composite material approach integrates the acid diffusion control function of compound (D1) with the lithographic properties of conventional resist materials, achieving both fine pattern formation and structural stability
2Measurement precision
If acid diffusion is not controlled, then lithography can be performed, but resolution and roughness are insufficient
Solution Approach 1:
Compound (D1) acts as an intermediary substance between the acid generator and the base resin. It mediates the acid diffusion process by providing a controlled pathway for acid transport, enabling precise resolution while maintaining smooth pattern edges. The molecular structure of compound (D1) with its specific functional groups facilitates this intermediary role in acid diffusion control
3Reliability
If process margin is increased, then lithography robustness is improved, but pattern miniaturization capability is reduced
Solution Approach 1:
The patent applies local quality control by enabling different regions of the resist film to exhibit different acid diffusion characteristics. Compound (D1) creates localized acid diffusion control zones that maintain process robustness in exposed areas while enabling fine feature formation in critical dimensions, achieving both large process margin and excellent miniaturization
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The resist composition achieves improved resolution, reduced roughness, and increased process margin, resulting in excellent lithography properties and good shape of the resist patterns, with enhanced depth of focus and larger process margins.
Implementation Method 1
a chemically amplified composition is used, which includes a base material component that exhibits a changed solubility in a developing solution under the action of acid and an acid-generator component that generates acid upon exposure
Implementation Method 2
there has been proposed a chemically amplified resist composition which uses, in combination with an acid generator component, an acid diffusion control agent which controls the diffusion of acid generated from the acid generator component upon exposure
Data Source
AI summary
A resist composition which generates acid upon exposure and exhibits changed solubility in a developing solution under action of acid, the resist composition including a base component which exhibits changed solubility in a developing solution under action of acid, and a compound represented by general formula (d1) in which Rd01 and Rd02 each independently represents a cyclic group which may have a substituent, a chain alkyl group which may have a substituent or a chain alkenyl group which may have a substituent; or Rd01 and Rd02 may be mutually bonded to form a condensed ring; m represents an integer of 1 or more; and Mm+ represents an organic cation having a valency of m.