Resist Composition Acid Diffusion Control
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Solution Overview
Problem
Conventional acid generators are insufficient in achieving optimal resolution and resist pattern shape in advanced photolithography processes, particularly in terms of mask dimension dependency and critical dimension uniformity.
Innovation Solution
A resist composition comprising a resin with an acid-labile group and an aromatic substituent, combined with a specific photo-acid generator and solvent, which includes a cyclic divalent hydrocarbon group with a heteroatom and a polycyclic monovalent hydrocarbon group, enhancing acid diffusion control and solubility to improve mask error factor and critical dimension uniformity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional acid generators are used, then the resist composition can be formed, but the mask dimension dependency and critical dimension uniformity are insufficient
Solution Approach 1:
The patent modifies the chemical structure of the acid generator by introducing a cyclic divalent hydrocarbon group with heteroatom and a polycyclic monovalent hydrocarbon group. These structural parameter changes optimize acid diffusion control and solubility characteristics, directly improving mask dimension dependency and critical dimension uniformity while maintaining reliable resolution and pattern shape
Solution Approach 2:
The resist composition employs a composite acid generator structure combining multiple hydrocarbon groups (cyclic divalent with heteroatom, polycyclic monovalent) with specific functional groups. This composite molecular structure synergistically provides both acid diffusion control for precision and solubility for reliability, resolving the contradiction between manufacturing precision and pattern quality
2Manufacturing precision
If acid diffusion is not controlled, then the acid generator can function, but the resolution and pattern shape deteriorate
Solution Approach 1:
The patent changes the physical and chemical parameters of the acid generator by incorporating cyclic divalent hydrocarbon groups with heteroatoms and polycyclic monovalent hydrocarbon groups. These parameter modifications control acid diffusion characteristics, ensuring that acid spreads to the appropriate extent during development to achieve high resolution while maintaining compositional stability
Solution Approach 2:
The acid generator structure is designed with specific local functional groups (cyclic divalent hydrocarbon group with heteroatom near sulfonic acid group, polycyclic monovalent hydrocarbon group at terminal) that provide localized acid diffusion control. This local quality optimization ensures precise acid distribution for resolution while maintaining overall composition stability
3Manufacturing precision
If the acid generator structure is not optimized, then the resist composition can be prepared, but the mask error factor and critical dimension uniformity are poor
Solution Approach 1:
The patent optimizes the acid generator structure by carefully selecting and positioning specific functional groups (cyclic divalent hydrocarbon group with 4-12 carbon atoms containing heteroatom, polycyclic monovalent hydrocarbon group with 7-14 carbon atoms). These parameter optimizations achieve favorable mask error factor and critical dimension uniformity while maintaining reasonable structural complexity for manufacturing
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The resist composition achieves favorable mask dimension dependency and critical dimension uniformity, particularly with high-energy beams like KrF excimer lasers or extreme ultraviolet rays, resulting in precise and fine pattern processing.
Implementation Method 1
a compound that is decomposed by exposure and generates acid (hereinafter referred to as 'acid generator') is used
Implementation Method 2
acid diffusion can be suppressed by optimizing the structure in the acid generator, and it becomes possible to form high-resolution patterns
Data Source
AI summary
A resist composition containing: (A) a resin containing a repeating unit having an acid-labile group and further containing at least one repeating unit having an aromatic substituent; (B) a photo-acid generator shown by a general formula (B-1); and (C) a solvent, where W1 represents a cyclic divalent hydrocarbon group having 4 to 12 carbon atoms with a heteroatom; W2 represents a cyclic monovalent hydrocarbon group having 4 to 14 carbon atoms without a heteroatom; Rf represents a divalent organic group shown by the following general formula; and M+ represents an onium cation. This provides a resist composition and a patterning process of using it that show a particularly favorable mask dimension dependency and CDU in photolithography where a light source is a high-energy beam such as a KrF excimer laser beam, an electron beam, or an extreme ultraviolet ray.