Resist Composition Acid Diffusion Control 193nm Lithography
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Solution Overview
Problem
Current resist compositions for semiconductor and liquid crystal display element manufacturing fail to achieve sufficient sensitivity, roughness reduction, and pattern shape quality, despite advancements in lithography techniques.
Innovation Solution
A resist composition combining an acid generator with a specific molar absorption coefficient and an acid diffusion-controlling agent having a specific anion moiety, which controls acid diffusion and enhances solubility changes in developing solutions, is used to form a resist pattern.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional acid generators and acid diffusion-controlling agents are used in resist composition, then the resist can perform basic lithography functions, but sensitivity, roughness reduction property, and pattern shape are not achieved sufficiently
Solution Approach 1:
The patent applies parameter changes by specifying precise molecular weight ranges (number-average molecular weight 500-5000, weight-average molecular weight 2000-20000) and molar absorption coefficients (500-5000 cm⁻¹ at 193 nm) for the acid diffusion-controlling agent. These parameter optimizations enable simultaneous achievement of high sensitivity, good roughness reduction, and excellent pattern shape without compromising lithography characteristics consistency.
Solution Approach 2:
The patent creates a composite resist system combining the base material component, acid generator component, and specifically designed acid diffusion-controlling agent with controlled molecular weight distribution. This composite approach allows each component to contribute its optimal properties: the base material provides solubility change upon acid generation, the acid generator produces acid upon exposure, and the acid diffusion-controlling agent with specific molecular characteristics regulates acid diffusion to achieve fine pattern formation with reduced roughness and high sensitivity.
2Productivity
If higher sensitivity is pursued in resist composition, then exposure efficiency improves, but roughness reduction property and pattern shape may deteriorate
Solution Approach 1:
The patent optimizes the molar absorption coefficient of the acid diffusion-controlling agent to be within 500-5000 cm⁻¹ at 193 nm exposure wavelength. This parameter range ensures sufficient acid generation sensitivity while simultaneously controlling acid diffusion to maintain excellent pattern shape and reduce roughness, resolving the trade-off between sensitivity and pattern quality.
Solution Approach 2:
The patent introduces local quality control through the acid diffusion-controlling agent that exhibits different functional characteristics at different stages: during exposure it allows sufficient acid generation for high sensitivity, while during development it controls acid diffusion locally to maintain sharp pattern edges and reduce roughness, thus achieving both high sensitivity and excellent pattern shape.
3Productivity
If acid diffusion is increased to enhance sensitivity, then exposure efficiency improves, but pattern shape control and roughness reduction deteriorate
Solution Approach 1:
The patent precisely controls the molecular weight parameters of the acid diffusion-controlling agent (number-average molecular weight 500-5000, weight-average molecular weight 2000-20000, and weight-average/number-average ratio 1.01-2.0) to optimize the balance between acid generation efficiency and acid diffusion control. These parameter optimizations enable the agent to facilitate sufficient acid diffusion for high sensitivity while simultaneously maintaining sharp pattern definition and reducing roughness.
Solution Approach 2:
The acid diffusion-controlling agent acts as an intermediary substance that mediates between acid generation and pattern formation. It facilitates acid diffusion to enhance sensitivity and exposure efficiency, while simultaneously controlling the diffusion extent to maintain excellent pattern shape control and roughness reduction, thus resolving the contradiction between sensitivity and pattern quality.
4Manufacturing precision
If acid diffusion is restricted to improve pattern shape, then lithography precision improves, but sensitivity and exposure efficiency deteriorate
Solution Approach 1:
The patent optimizes the molecular weight parameters of the acid diffusion-controlling agent to achieve the delicate balance required: number-average molecular weight 500-5000 provides sufficient chain mobility for acid diffusion to maintain high sensitivity, while the weight-average molecular weight 2000-20000 and weight-average/number-average ratio 1.01-2.0 provide adequate chain length and distribution to control acid diffusion and achieve excellent lithography precision and pattern shape.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition achieves higher sensitivity and improved roughness reduction and pattern shape quality, enabling better lithography characteristics.
Implementation Method 1
an acid generator component (B) that generates acid upon exposure
Implementation Method 2
a base material component (A) that exhibits changed solubility in a developing solution under action of acid
Implementation Method 3
an acid diffusion-controlling agent (D) that controls diffusion of the acid generated from the acid generator component (B)
Data Source
AI summary
A resist composition containing a base component, an acid generator component, and an acid diffusion-controlling agent. The acid generator component includes a compound having a molar absorption coefficient of 50,000 mol−1·L·cm−1 or less at an exposure wavelength of 193 nm, and the acid diffusion-controlling agent includes a compound represented by General Formula (d0), in which Rd01 represents a cyclic group or a chain alkenyl group which may have a substituent, Yd01 represents a divalent linking group containing an oxygen atom, m represents an integer of 1 or more, and Mm+ represents an m-valent organic cationRd01-Yd01-CH2—SO3⊖(Mm⊕)1/m (d0)