Resist Composition Acid Diffusion Control
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Solution Overview
Problem
Current lithography technologies face challenges in achieving controlled acid diffusion and low roughness during both positive and negative tone developments, which are crucial for forming fine line-and-space patterns with improved etch resistance.
Innovation Solution
A monomer with a specific formula is synthesized, forming a polymer that serves as a base resin in a resist composition, enhancing acid diffusion control and roughness performance. This polymer, combined with an acid generator and organic solvent, is used in a pattern forming process involving high-energy radiation and organic solvent development.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional base resins with methacrylate units and lactone units are used, then the resist composition can achieve basic pattern formation, but the acid diffusion control and roughness performance are insufficient for fine line-and-space patterns
Solution Approach 1:
The patent changes the chemical structure parameters of the base resin by introducing specific monomer units with controlled molecular structures. The monomer units have specific functional groups and molecular weights that are optimized to control acid diffusion and reduce roughness, directly addressing the contradiction between pattern profile control and acid diffusion control.
Solution Approach 2:
The patent uses composite base resin materials comprising multiple monomer units including methacrylate units, lactone units, and specifically fused ring lactone units. This composite approach allows the resin to simultaneously achieve good pattern formation, controlled acid diffusion, and reduced roughness by combining the advantages of different functional units.
2Strength
If the base resin film is made thicker to improve etch resistance, then pattern collapse is reduced, but the resolution and sensitivity are compromised
Solution Approach 1:
The patent optimizes the molecular weight and chemical structure parameters of the base resin to achieve the minimum necessary film thickness for etch resistance while maintaining resolution. By changing the resin composition to include fused ring lactone units with specific molecular structures, the patent achieves high etch resistance at reduced film thickness, preventing pattern collapse without compromising resolution.
3Ease of manufacture
If conventional development processes are used, then basic patterning is achieved, but the line width roughness and pattern collapse occur during etching
Solution Approach 1:
The patent modifies the chemical parameters of the base resin to be more resistant to etching and less prone to roughness formation. The specific monomer units introduced have molecular structures that reduce line width roughness during etching while maintaining ease of development, solving the contradiction between simple development processes and high manufacturing precision.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The resulting resist composition effectively forms fine line-and-space patterns with improved etch resistance and reduced pattern collapse, maintaining high resolution and sensitivity across both development tones.
Implementation Method 1
a photoacid generator and sensitivity adjustors such as a basic compound or quencher
Implementation Method 2
a highlight is recently put on the negative tone resist by organic solvent development
Data Source
AI summary
A polymer for resist use is obtainable from a monomer having formula (1) wherein R1 is H, CH3 or CF3, R2 and R3 each are H or a monovalent hydrocarbon group, X1 is a divalent hydrocarbon group, k1=0 or 1, and Z forms a 5 or 6-membered alicyclic ring. A resist composition comprising the polymer is shelf stable and displays a high dissolution contrast, controlled acid diffusion and low roughness during both alkaline development and organic solvent development.