Resist Composition Acid Generator for EUV Lithography
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional resist compositions containing onium salt acid generators face difficulties in achieving high sensitivity and precise pattern formation, especially when miniaturization techniques like electron beam and EUV lithography require fine resist patterns of several tens of nanometers, leading to challenges in obtaining predetermined pattern shapes.
Innovation Solution
A novel resist composition incorporating a compound with a specific anion and cation moiety, represented by general formula (b1), which acts as an acid generator, enhancing the sensitivity and resolution of resist patterns while reducing roughness.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional onium salt acid generators are used in resist compositions, then the resist composition can be formed with standard materials, but the sensitivity and resolution are insufficient for miniaturized patterns of several tens of nanometers
Solution Approach 1:
The patent changes the chemical parameters of the acid generator by introducing a specific compound structure with formula (b1) containing a cation moiety and anion moiety, where the anion has specific properties that enhance acid generation efficiency upon exposure, thereby improving both sensitivity and pattern formation precision for miniaturized patterns
Solution Approach 2:
The patent uses a composite acid generator system combining the compound of formula (b1) with a base resin containing specific structural units (acid decomposable groups, lactone-containing cyclic groups, or polar groups), creating a synergistic effect that achieves high sensitivity and precise pattern formation simultaneously
2Manufacturing precision
If the wavelength of exposure light source is shortened to achieve miniaturization, then the resolution improves, but the requirements for lithography properties and sensitivity become more stringent
Solution Approach 1:
The patent modifies the chemical parameters of the resist composition by introducing a compound with specific molecular structure (formula b1) that enhances photoacid generation efficiency, enabling the resist to achieve high sensitivity even when using shorter wavelength exposure sources for miniaturization
3Manufacturing precision
If base resin with specific structural units is used to improve lithography properties, then the solubility change under acid action is enhanced, but the complexity of resist composition increases
Solution Approach 1:
The patent applies local quality by incorporating specific structural units (acid decomposable groups, lactone-containing cyclic groups, or polar groups) at particular positions within the base resin structure, allowing the resist composition to achieve enhanced lithography properties through localized functional groups rather than requiring complex overall structure
Solution Approach 2:
The patent creates a composite resist system combining the compound of formula (b1) with base resin containing specific structural units, where each component contributes specific functions: the compound provides enhanced photoacid generation while the base resin provides the necessary solubility characteristics, achieving balanced performance without excessive complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The novel resist composition enables the formation of resist patterns with improved sensitivity and high resolution, achieving good shape and reduced roughness, thereby addressing the limitations of conventional compositions in miniaturized pattern formation.
Implementation Method 1
an acid-generator component that generates acid upon exposure
Implementation Method 2
the polarity of the base resin increases by the action of the generated acid, thereby making the exposed areas of the resist film soluble in the alkali developing solution
Data Source
AI summary
A resist composition including a base component which exhibits changed solubility in a developing solution under action of acid, and a compound (B1) having an anion moiety and a cation moiety and being represented by general formula (b1) (wherein R01 to R014 each independently represents a hydrogen atom or a hydrocarbon group which may have a substituent, or two or more of R01 to R014 may be mutually bonded to form a ring structure, provided that at least two of R01 to R014 are mutually bonded to form a ring structure, and at least one of R01 to R014 has an anion group, and the anion moiety as a whole forms an anion having a valency of n; n represents an integer of 1 or more; represents an integer of 1 or more; and Mm+ represents an organic cation having a valency of m).