Resist Composition Acid Generator for Lithography Roughness
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Solution Overview
Problem
Conventional chemically amplified resist compositions using onium salt-based acid generators with perfluoroalkylsulfonic acid ions face limitations in resist pattern roughness, mask reproducibility, and exposure latitude, particularly as miniaturization of resist patterns advances.
Innovation Solution
A resist composition incorporating an acid generator represented by general formula (b1-1), which includes a divalent aliphatic group, a monovalent aliphatic group with —C(═O)—O— or —S(═O)2—, and a monovalent organic cation, enhancing the lithography properties such as mask reproducibility and exposure latitude, and reducing pattern roughness.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If onium salt-based acid generators with perfluoroalkylsulfonic acid ions are used, then the resist composition can achieve basic lithography functionality, but the resist pattern roughness increases and mask reproducibility deteriorates
Solution Approach 1:
The patent changes the chemical parameters of the acid generator by replacing perfluoroalkylsulfonic acid ions with carboxylic acid ions and sulfonic acid ions. This parameter change in the ionic structure fundamentally alters the acid generation characteristics, leading to reduced resist pattern roughness and improved mask reproducibility while maintaining adequate exposure latitude.
Solution Approach 2:
The patent employs a composite acid generator system containing both carboxylic acid ions and sulfonic acid ions. This composite approach combines the benefits of different ionic structures to achieve superior lithography properties, where the synergistic effect of multiple ion types resolves the contradiction between pattern roughness and mask reproducibility.
2Reliability
If conventional acid generators are used, then the resist composition maintains simplicity in formulation, but the exposure latitude is insufficient for advanced miniaturization
Solution Approach 1:
The patent modifies the acid generation parameters by introducing carboxylic acid ions and sulfonic acid ions with different pKa values and acid strengths. This parameter diversification enables broader exposure latitude to accommodate varying process conditions and pattern dimensions, which is critical for advanced miniaturization applications.
3Measurement precision
If the resist pattern size is miniaturized, then the resolution is improved, but the roughness of the resist pattern increases
Solution Approach 1:
The patent changes the acid generation parameters by using carboxylic acid ions and sulfonic acid ions that provide more controlled and uniform acid distribution during exposure. This parameter optimization enables better resolution at miniaturized dimensions while simultaneously controlling pattern roughness through improved acid diffusion characteristics.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed resist composition achieves improved lithography properties, including reduced roughness and enhanced exposure latitude, leading to better resist pattern formation and reproducibility.
Implementation Method 1
an acid-generator component (B) which generates acid upon exposure
Data Source
AI summary
A resist composition including a base component (A) which exhibits changed solubility in an alkali developing solution under action of acid and an acid-generator component (B) which generates acid upon exposure, the acid-generator component (B) including an acid generator (B1) represented by general formula (b1-1) shown below (in the formula, RX represents a divalent aliphatic group of 3 to 20 carbon atoms; RY represents a monovalent aliphatic group of 3 to 20 carbon atoms having —C(═O)—O— or —S(═O)2—; each of R1 and R2 independently represents a divalent linking group; and Z+ represents a monovalent organic cation).