Resist Composition Acid Generator Nitrogen Compound Pattern Shape
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Solution Overview
Problem
As resist patterns miniaturize, there is a growing need for materials that maintain favorable lithography properties while forming high-resolution, well-shaped patterns, but current photodegradable bases can deteriorate the mask error factor (MEF) and increase sensitivity to exposure dose.
Innovation Solution
A resist composition incorporating a base component that changes solubility in a developing solution under acid action, an acid generator, and a nitrogen-containing organic compound, specifically using a compound represented by general formula (b1-1) for the acid generator and (d1) for the nitrogen-containing compound, to improve resist pattern shape and mask error factor.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Shape
If photodegradable bases are used to improve resist pattern shape, then pattern shape is improved, but mask error factor deteriorates and sensitivity to exposure dose increases
Solution Approach 1:
The patent changes the chemical structure parameters of the acid generator by specifying compounds with particular formulas (b1-1, b1-2, b1-3) and restricting others (b1-4, b1-5). It also parameterizes the nitrogen-containing compound with specific structural formulas (d1, d2, d3) and concentration ranges (0.1-10 wt%). These parameter changes optimize the balance between pattern shape improvement and MEF maintenance by controlling acid generation kinetics and quenching efficiency.
Solution Approach 2:
The patent creates a composite resist system combining the base component (A), specifically formulated acid generator (B) with structures (b1-1) to (b1-5), and nitrogen-containing compound (D) with structures (d1) to (d3). This composite approach integrates multiple functional components where the acid generator provides controlled acid generation and the nitrogen-containing compound provides quenching, achieving synergistic effects that improve pattern shape while maintaining acceptable MEF.
2Shape
If photodegradable bases are used to improve resist pattern shape, then pattern shape is improved, but sensitivity to exposure dose increases
Solution Approach 1:
The patent controls exposure dose sensitivity by parameterizing the acid generator structure (formulas b1-1 to b1-5) and nitrogen-containing compound structure (formulas d1 to d3). The specific structural parameters and concentration ranges (0.1-10 wt% for nitrogen-containing compound) are optimized to achieve the desired balance between pattern shape improvement and exposure dose sensitivity control.
Solution Approach 2:
The nitrogen-containing compound (D) with specific structures (d1, d2, d3) acts as an intermediary that modulates the interaction between generated acid and the photodegradable base. By controlling the quenching function through this intermediary, the patent reduces excessive sensitivity to exposure dose while maintaining the pattern shape improvement benefits of photodegradable bases.
3Measurement precision
If resist patterns are miniaturized to achieve higher resolution, then resolution is improved, but maintaining favorable lithography properties becomes difficult
Solution Approach 1:
The patent applies parameter changes by specifying precise chemical structures for the acid generator (formulas b1-1 to b1-5) and nitrogen-containing compound (formulas d1 to d3). These structural parameters control acid generation rate, diffusion, and quenching efficiency, enabling high-resolution pattern formation while maintaining favorable lithography properties such as line edge roughness and pattern fidelity.
Solution Approach 2:
The patent substitutes mechanical/physical approaches with chemical mechanisms by using specifically designed acid generators and nitrogen-containing compounds. The chemical reactions (acid generation, quenching, and base modification) replace purely physical lithography processes, enabling better control over miniaturized pattern formation and maintaining lithography properties at higher resolutions.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition enhances resist pattern shape and mask error factor, maintaining high resolution and sensitivity control, thereby improving the formation of fine patterns in lithography.
Implementation Method 1
an acid generator component (B) which generates acid upon exposure
Implementation Method 2
a nitrogen-containing organic compound component (D)... These nitrogen-containing organic compounds function as quenchers that trap the acid generated from the acid generator
Implementation Method 3
a base component (A) which exhibits changed solubility in a developing solution under the action of acid
Data Source
AI summary
A resist composition including a base component (A) which exhibits changed solubility in a developing solution under the action of acid, an acid generator component (B) which generates acid upon exposure, and a nitrogen-containing organic compound component (D), wherein the acid generator component (B) includes an acid generator (B1) containing a compound represented by general formula (b1-1) shown below, and the nitrogen-containing organic compound component (D) includes a compound (D1) represented by general formula (d1) shown below. In the formula, Y0 represents an alkylene group of 1 to 4 carbon atoms which may have a substituent, R0 represents an alkyl group, alkoxy group, halogen atom, halogenated alkyl group, hydroxyl group or oxygen atom (═O), p represents 0 or 1, and Z+ represents an organic cation.