Resist Composition Acid-Labile Group Pattern Resolution
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Solution Overview
Problem
Current resist compositions face challenges in achieving precise pattern formation and resolution due to limitations in acid-labile groups and acid generators, leading to suboptimal performance in photolithography processes.
Innovation Solution
A resist composition incorporating a specific compound represented by formula (I) and its derived resin units, along with an acid generator, which includes an acid-labile group and a quencher, to enhance pattern formation and resolution during photolithography.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional acid-labile groups and acid generators are used in resist composition, then the basic photolithography function is maintained, but pattern resolution and dry-etching tolerance are insufficient
Solution Approach 1:
The patent changes the chemical parameters of the acid-labile group by introducing a specific structural formula (I) with defined substituents (R1, R2, Rf1, Rf2, A1, A2, A3, A4, X1, X2). This structural modification optimizes the group's reactivity and selectivity, enabling better pattern resolution while maintaining sufficient dry-etching tolerance through controlled chemical transformation during lithography processes
Solution Approach 2:
The resist composition uses a composite approach by combining the specifically structured acid-labile group (formula I) with an acid generator and quencher in defined proportions. This composite formulation creates synergistic effects where each component contributes specific properties, achieving both high pattern resolution and adequate dry-etching tolerance that neither component could achieve alone
2Manufacturing precision
If the resist composition is optimized for pattern formation, then resolution improves, but performance in photolithography processes becomes suboptimal due to limitations in acid generators and quenchers
Solution Approach 1:
The acid-labile group with formula (I) is designed to perform multiple functions: it serves as the primary pattern-defining element during exposure, provides etch resistance during dry etching through its structural stability, and enables post-exposure bake control through its thermal response characteristics. This multi-functionality allows the single compound to optimize overall photolithography process performance rather than just pattern formation
Solution Approach 2:
The specifically structured acid-labile group acts as an intermediary between the acid generator and the final patterned structure. It mediates the transformation of chemical energy from the acid generator into precise spatial patterns, while also interfacing with the dry etching process through its structural properties, thereby coordinating multiple process steps for optimal overall performance
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition improves pattern resolution and dry-etching tolerance by utilizing the acid-labile groups and acid generators, resulting in better performance in photolithography processes.
Implementation Method 1
an acid generator
Implementation Method 2
a resin having an acid-labile group
Data Source
AI summary
A compound represented by formula (I):wherein R1 represents a hydrogen atom, a halogen atom or a C1 to C6 alkyl group in which a hydrogen atom may be replaced by a halogen atom, R2 represents a C5 to C18 hydrocarbon group consisting of the following groups (a) and (b): (a) a liner or branched divalent hydrocarbon group and (b) an alicyclic hydrocarbon group, Rf1 and Rf2 each independently represent a C1 to C4 perfluoroalkyl group, A1 represents a single bond, a C1 to C6 alkanediyl group or *-A2-X1-(A3-X2)a-(A4)b-, * represents a binding site to an oxygen atom, A2, A3 and A4 each independently represent a C1 to C6 alkanediyl group, X1 and X2 each independently represent —O—, —CO—O— or —O—CO—, a represents 0 or 1, and b represents 0 or 1.