Chemically Amplified Resist Composition with Acid Quencher
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Solution Overview
Problem
Current chemically amplified resist compositions face challenges in achieving high resolution and contrast for microelectronic device patterning, particularly at the 45-nm node, due to limitations in light absorption and acid diffusion, leading to reduced resolution and focus margin in photolithography processes.
Innovation Solution
A chemically amplified positive or negative resist composition incorporating a β-alanine, γ-aminobutyric acid, or 5-aminovaleric acid derivative with an acid labile group-substituted carboxyl group, combined with an acid generator, which suppresses acid diffusion and enhances contrast by losing quencher function at higher acid exposure, thereby improving resolution and focus margin.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional chemically amplified resist compositions are used, then the resist can undergo deprotection or crosslinking reactions under acid action, but the acid diffusion reduces resolution and contrast
Solution Approach 1:
The patent introduces a quencher compound as an intermediary substance that absorbs excess acid generated during photolysis. This quencher acts as a mediator between the acid generator and the resin, controlling acid diffusion by chemical neutralization rather than physical barriers, thereby maintaining high resolution while enabling effective crosslinking or deprotection reactions.
Solution Approach 2:
The patent modifies the chemical parameters of the resist system by selecting specific quencher compounds with appropriate basicity and molecular structure. By changing the parameters of acid-base interaction and controlling the concentration ratio between acid generator and quencher, the system achieves optimal balance between reaction efficiency and acid diffusion control.
2Manufacturing precision
If quenchers are added to control acid diffusion, then contrast improves, but environmental resistance degrades due to amine contamination
Solution Approach 1:
The patent changes the chemical parameters of the quencher compound by selecting non-amine basic compounds or modified amine structures that maintain acid-neutralizing capability while reducing nucleophilicity. This parameter adjustment allows the quencher to control acid diffusion for high contrast while minimizing contamination and degradation of environmental resistance.
Solution Approach 2:
The patent applies local quality by designing the quencher compound to have differentiated functional regions: one part that effectively neutralizes acid (basic group) and another part that resists contamination (sterically hindered or electron-withdrawing substituents). This localized functional differentiation maintains contrast improvement while preserving environmental resistance.
3Area of moving object
If pattern feature size is reduced, then integration density increases, but light contrast lowers leading to reduced resolution and focus margin
Solution Approach 1:
The patent changes the chemical reaction parameters by introducing quenchers that enhance the acidity of generated protons. This parameter modification amplifies the chemical contrast in response to light exposure, allowing smaller pattern features to maintain sufficient contrast for high-resolution patterning even as feature size decreases.
Solution Approach 2:
The patent substitutes optical contrast (physical) with chemical contrast enhancement through acid-base reactions. By replacing reliance on optical differentiation with chemically amplified contrast through quencher-mediated acid generation, the system achieves high resolution for reduced pattern features that would be difficult to resolve optically.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The resist composition achieves high resolution and wide focus margin for hole and trench patterns in positive compositions and isolated line patterns in negative compositions, with improved alkaline dissolution contrast and minimized roughness, making it suitable for VLSI and photomask fabrication.
Implementation Method 1
Chemically amplified resist compositions comprising an acid generator capable of generating an acid upon exposure to light or EB
Implementation Method 2
Quenchers are often added to these resist compositions for the purpose of controlling the diffusion of the acid to unexposed areas to improve the contrast
Implementation Method 3
chemically amplified positive resist compositions wherein deprotection reaction takes place under the action of acid and chemically amplified negative resist compositions wherein crosslinking reaction takes place under the action of acid
Data Source
AI summary
A chemically amplified resist composition comprising a base polymer, an acid generator, and an amine quencher in the form of a β-alanine, γ-aminobutyric acid or 5-aminovaleric acid derivative having an acid labile group-substituted carboxyl group has a high contrast of alkaline dissolution rate before and after exposure and forms a pattern of good profile at a high resolution, minimal roughness and wide focus margin.