Multiblock Copolymer Resist Additive for Immersion Lithography

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Solution Overview

Problem

In ArF immersion lithography, resist films are prone to deformation, swelling, and defects such as bubbles and watermarks due to acid or amine compounds dissolving in water, leading to pattern collapse and contamination of the projection lens.

Innovation Solution

A resist additive in the form of a multiblock copolymer with a hydrophobic group that improves the hydrophobicity of the resist film surface, preventing leaching in water during immersion lithography and converting to hydrophilicity via acid-induced deprotection reaction for easy developer washing.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a protective film is formed on the resist film to prevent contact with water, then material leaching is prevented, but the film structure becomes more complex and light transmittance may be interrupted

Engineering Contradiction:
Improveprevention of material leachingVSAvoidfilm structure complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent combines the protective film function and the resist film function into a single integrated composition. The copolymer containing hydrophobic groups serves both as the resist matrix and as the protective layer, eliminating the need for a separate protective film while maintaining material leaching prevention

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The copolymer resin performs multiple functions simultaneously: it acts as the resist base polymer, provides hydrophobic protection against water during immersion lithography, and enables pattern formation through acid-induced deprotection. This multi-functionality eliminates the need for separate protective films

Inventive Principle:
Principle #6Universality (Multi-functionality)

2Reliability

If the resist film surface is made hydrophobic to prevent material leaching in water, then immersion lithography stability is improved, but developer washing becomes difficult

Engineering Contradiction:
Improveimmersion lithography stabilityVSAvoiddeveloper washing ease
Core Design Contradiction:
ReliabilityVSEase of operation

Solution Approach 1:

The patent introduces dynamic hydrophobicity that changes based on the chemical environment. The copolymer contains acid-labile protecting groups that are removed during development, transforming the surface from hydrophobic (for water resistance) to hydrophilic (for developer washing), allowing the property to adapt to different process stages

Inventive Principle:
Principle #15Dynamics

Solution Approach 2:

The patent changes the hydrophobicity parameter of the resist film during the development process. Acid-induced deprotection reactions modify the chemical structure of the copolymer, converting hydrophobic groups to hydrophilic groups, thereby changing the surface property from water-repellent to developer-washable

Inventive Principle:
Principle #35Parameter changes

3Reliability

If a separate protective film is used to prevent contact with water, then material dissolution is prevented, but light transmittance at exposure wavelength is reduced

Engineering Contradiction:
Improveprevention of acid and amine dissolutionVSAvoidlight transmittance at exposure wavelength
Core Design Contradiction:
ReliabilityVSIllumination intensity

Solution Approach 1:

The patent merges the protective function with the resist film itself, eliminating the need for a separate protective layer that would interfere with light transmission. The copolymer provides inherent hydrophobic protection while maintaining optical clarity

Inventive Principle:
Principle #5Merging (Combining)

4Device complexity

If the resist film directly contacts water during immersion lithography, then the process is simple, but pattern deformation and defects occur due to material leaching

Engineering Contradiction:
Improveprocess simplicityVSAvoidpattern formation accuracy
Core Design Contradiction:
Device complexityVSManufacturing precision

Solution Approach 1:

The patent applies preliminary protection by incorporating hydrophobic groups into the resist composition before exposure. This pre-established hydrophobic barrier prevents water from penetrating and dissolving acids or amines during immersion lithography, maintaining pattern integrity without complex additional steps

Inventive Principle:
Principle #10Preliminary action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The resist additive effectively prevents material leaching during immersion lithography and facilitates efficient development by converting the resist film surface from hydrophobic to hydrophilic, reducing defects and ensuring high-resolution pattern formation.

Implementation Method 1

improves hydrophobicity of the surface of a resist film to prevent materials from being leached from the resist film in water

Methodology Applied
Scientific EffectHydrophobicity: Hydrophobe

Implementation Method 2

converted to have hydrophilicity by deprotection reaction during a development process

Methodology Applied
Scientific EffectDeprotection reaction: Hydrolysis

Data Source

PatentUS9063411B2Additive for resist and resist composition comprising same
Publication Date: 2015.06.23 SK MATERIALS PERFORMANCE CO LTD
  • US9063411B2 patent drawing
  • US9063411B2 patent drawing
  • US9063411B2 patent drawing

AI summary

A resist additive represented by Formula 1 below and a resist composition including the additive are disclosed. The resist additive improves hydrophobicity of the surface of the resist film to prevent materials from being leached in water during exposure of immersion lithography and is converted to have hydrophilicity by deprotection reaction during development. As a result, a micropattern of a resist film with excellent sensitivity and high resolution is formed.In Formula 1, the substituents are defined as described in the specification.