Resist Base Material for High-Resolution Lithography
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Solution Overview
Problem
Conventional polymer-based resist materials face challenges in miniaturization due to roughness on fine pattern surfaces, low heat resistance, and poor solubility in safe solvents, leading to decreased yield and pattern quality.
Innovation Solution
A resist base material comprising a compound with a specific structure, represented by formulas (1) to (1d), which includes a 2n-valent group and various alkyl, aryl, and halogen groups, offering improved heat resistance, solubility, and storage stability, and can be used to form a resist composition with a solvent and acid generating agents for pattern formation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Shape
If polymer based resist materials are used, then film formation is good, but heat resistance is insufficient and pattern surface roughness occurs
Solution Approach 1:
The patent changes the molecular weight parameter from high (10,000-100,000 for polymers) to low (100-10,000 for the new resist material). This parameter change simultaneously improves heat resistance and reduces pattern surface roughness while maintaining adequate film formation capabilities through optimized molecular structure
Solution Approach 2:
The patent creates a composite resist material by combining a low molecular weight base compound with specific functional groups (carboxylic acid groups) and crosslinking agents. This composite structure provides both the heat resistance of crosslinked networks and the fine pattern capability of low molecular weight materials
2Manufacturing precision
If low molecular weight resist materials are used, then finer patterns can be formed, but heat resistance is insufficient
Solution Approach 1:
The patent performs preliminary crosslinking preparation by incorporating crosslinking agents and carboxylic acid groups into the resist material structure before lithography. This preliminary action creates a heat-resistant framework that maintains pattern precision during subsequent high-temperature processing steps
Solution Approach 2:
The patent optimizes the molecular weight parameter to a specific low range (100-10,000) and combines it with controlled crosslinking density. This parameter optimization enables fine pattern formation while the crosslinked structure provides the necessary heat resistance
3Ease of manufacture
If conventional polymer resist materials are used, then coating is easy, but solubility in safe solvents is poor
Solution Approach 1:
The patent changes the molecular weight parameter to a low range (100-10,000) and incorporates polar functional groups (carboxylic acid groups). These parameter changes dramatically improve solubility in safe solvents like ethyl lactate while maintaining coating processability through optimized viscosity and wetting characteristics
4Use of energy by moving object
If low molecular weight polynuclear polyphenolic compounds are used, then sensitivity is improved, but heat resistance and pattern shape are poor
Solution Approach 1:
The patent creates a composite structure by combining low molecular weight polyphenolic compounds with carboxylic acid groups and crosslinking agents. This composite provides the radiation sensitivity of polyphenolic compounds while the crosslinked network delivers heat resistance and pattern shape control
Data Source
AI summary
The present invention provides a resist base material containing a compound having a specific structure and/or a resin derived from the compound as a monomer.