Resist Collapse Prevention in Semiconductor Etching
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Solution Overview
Problem
The degradation of dry etching resistance in resist materials used in semiconductor manufacturing leads to resist collapse and increased Line Edge Roughness (LER) and Line Width Roughness (LWR), affecting the quality and yield of semiconductor devices, particularly with the transition from KrF to ArF excimer lasers and the adoption of immersion and EUV exposure techniques.
Innovation Solution
A semiconductor device producing method that employs a dry etching treatment using a gas mixture of tri-fluoromethane (CHF3), hydrogen bromide (HBr), and oxygen (O2) to suppress resist collapse, with specific power supply configurations and gas ratios to control plasma generation and deposition on the resist surface, minimizing stress and maintaining pattern integrity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If ArF excimer laser is used instead of KrF excimer laser for exposure, then higher integration and performance are achieved, but dry etching resistance of the resist material is degraded
Solution Approach 1:
A deposited film is formed on the resist material before the dry etching process. This preliminary deposition creates a protective layer that compensates for the inherently lower dry etching resistance of ArF resist materials, allowing them to withstand the etching process without collapse while maintaining the high pattern precision required for advanced semiconductor manufacturing.
2Adaptability or versatility
If resist material is changed to accommodate ArF excimer laser, then exposure technique is improved, but resist collapse occurs during dry etching
Solution Approach 1:
The deposited film is applied to the resist material before dry etching to provide structural support and prevent collapse. This preliminary protective measure enables the use of resist materials optimized for ArF exposure while compensating for their reduced structural stability during subsequent etching processes.
Solution Approach 2:
The deposited film acts as an intermediary layer between the ArF-optimized resist material and the dry etching process. This intermediate layer protects the resist structure from direct exposure to the harsh etching environment, allowing the resist to maintain its pattern fidelity without requiring modification of the resist material itself.
3Manufacturing precision
If dry etching is performed on insulating film with resist as mask, then pattern transfer is achieved, but LER and LWR increase causing device characteristic degradation
Solution Approach 1:
The deposited film is formed on the resist material before the dry etching process to create a protective barrier. This preliminary protection prevents resist collapse and edge roughening during etching, thereby maintaining both pattern transfer accuracy and reducing Line Edge Roughness (LER) and Line Width Roughness (LWR) variations that would otherwise degrade device characteristics.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method effectively prevents resist collapse and reduces LER and LWR, ensuring improved device characteristics and yield by maintaining pattern precision and reducing defects in line and space patterns, thereby enhancing the reliability of semiconductor devices.
Implementation Method 1
a dry etching treatment in which gas containing C, F, Br, H, and O is used
Implementation Method 2
A deposited film in which C and Br are coupled is produced on the resist
Data Source
AI summary
In a semiconductor device producing method according to one embodiment, an insulating film containing silicon is formed on a semiconductor substrate, a resist is deposited on the insulating film, the resist is patterned into a predetermined pattern, and the insulating film is processed by a dry etching treatment in which gas containing C, F, Br, H, and O is used with the resist having the predetermined pattern as a mask. A deposited film in which C and Br are coupled is produced on the resist.