Chemically Amplified Resist Composition for High Resolution Lithography
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Chemically amplified positive resist compositions used in semiconductor microfabrication and circuit board production face challenges in achieving high resolution and good pattern profiles, particularly in post-exposure delay scenarios where acid inactivation leads to performance deterioration.
Innovation Solution
A chemically amplified positive resist composition comprising specific polymerization units and an acid generator, including a resin with polymerization units represented by formulas (I), (II), and (III), and an acid generator such as diazomethane compounds with a sulfonyl group, optimized to maintain pattern quality and resolution by controlling acid generation and solubility in alkali solutions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional chemically amplified positive resist compositions are used, then the basic lithography function is provided, but pattern resolution and profile quality deteriorate due to acid inactivation during post-exposure delay
Solution Approach 1:
The patent introduces a carboxylic acid group as an intermediary that mediates between the generated acid and the polymerization units. This carboxylic acid group temporarily stores the acid through hydrogen bonding, preventing direct acid-catalyzed depolymerization during post-exposure delay, and then releases it during development to maintain pattern quality
Solution Approach 2:
The patent modifies the chemical parameters of the resist composition by incorporating specific polymerization units with carboxylic acid groups (formulas I-III) and adjusting their content ratios. This changes the acid-base interaction parameters, enabling controlled acid storage and release that maintains resist performance stability during post-exposure delay
2Manufacturing precision
If acid generation is enhanced to improve pattern formation, then solubility in alkali solutions increases, but acid inactivation occurs more rapidly during post-exposure delay
Solution Approach 1:
The patent applies preliminary action by having the carboxylic acid groups ready in advance to capture and store acid as soon as it is generated during exposure. This preliminary acid storage prevents acid inactivation during the subsequent post-exposure delay period, extending the effective duration of acid generation
Solution Approach 2:
The carboxylic acid groups act as intermediary storage sites that buffer the acid generation process, allowing sustained acid availability for pattern formation without the rapid inactivation that would otherwise occur
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition achieves high resolution and good pattern profiles, minimizing performance deterioration due to post-exposure delays by ensuring effective acid catalysis and solubility, thereby enhancing the reliability of semiconductor and circuit board manufacturing processes.
Implementation Method 1
chemically amplified positive resist composition comprising (A) a resin which comprises (i) a polymerization unit represented by the formula (I)... (iii) a polymerization unit represented by the formula (III)... and (B) at least one acid generator
Data Source
AI summary
A chemically amplified positive resist composition comprising (A) a resin which comprises (i) a polymerization unit represented by the formula (I):wherein R7 represents a hydrogen atom etc., R8 represents a C1-C4 alkyl group, p represents an integer of 1 to 3, and q represents an integer of 0 to 2,(ii) at least one polymerization unit selected from a group consisting of a polymerization unit represented by the formula (II):wherein R1 represents a hydrogen atom etc., R2 represents a C1-C8 alkyl group and ring X represents an alicyclic hydrocarbon group, and a polymerization unit represented by the formula (IV):wherein R3 represents a hydrogen atom etc., R4 and R5 independently represents a hydrogen atom etc., R10 represents a C1-C6 alkyl group etc., and(iii) a polymerization unit represented by the formula (III):wherein R3, R4 and R5 are the same as defined above, E represents a divalent hydrocarbon group, G represents a single bond etc., Z represents a carbonyl group etc. and L represents an anthryl group etc., and(B) at least one acid generator.