Resist Composition with Local Acid Control for Sensitive Thin-Film Patterns
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Solution Overview
Problem
There is a demand for a resist composition that can form fine patterns with improved sensitivity, reduced critical dimension uniformity (CDU), and minimized film thickness in semiconductor manufacturing, particularly with advancements in lithography technologies using EUV or FB.
Innovation Solution
A resist composition comprising a resin component (A1) with a constitutional unit derived from a specific compound and an acid generator component (B) that generates acid upon light exposure, altering solubility in a developing solution, is used to form a resist pattern through light exposure and development.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional resist materials are used, then basic lithography functionality is achieved, but sensitivity is insufficient and film thickness cannot be reduced further
Solution Approach 1:
The patent modifies the chemical structure of the resist material by introducing specific constitutional units with acid dissociable groups and cyclic structures. This changes the chemical parameters of the resist material to achieve higher sensitivity to EUV/FB light while maintaining appropriate film thickness through controlled solubility changes during development.
Solution Approach 2:
The resist composition combines multiple functional components: a resin component with specific constitutional units (a0) containing acid dissociable groups and cyclic structures, and an acid generator component (B). This composite material approach integrates the benefits of both components to achieve enhanced sensitivity and controlled film thickness.
2Manufacturing precision
If acid diffusion is increased to improve pattern formation, then CDU is improved, but resolution deteriorates due to excessive acid migration
Solution Approach 1:
The patent introduces constitutional units with specific structures (a0) that create localized acid generation and diffusion zones. The cyclic group structure and acid dissociable groups are strategically positioned to control acid diffusion locally, improving CDU while preventing excessive acid migration that would degrade resolution.
Solution Approach 2:
The resin component with specific constitutional units acts as an intermediary between the acid generator and the developing solution. It controls acid diffusion through its molecular structure, mediating the balance between acid migration for CDU improvement and acid containment for resolution maintenance.
3Length of moving object
If film thickness is reduced to achieve finer patterns, then pattern miniaturization is achieved, but sensitivity decreases due to insufficient light absorption
Solution Approach 1:
The patent changes the optical and chemical parameters of the resist material by incorporating constitutional units with high light absorption coefficients and appropriate HOMO/LUMO energy levels. This allows the film to maintain high sensitivity even at reduced thickness by optimizing the material's interaction with EUV/FB light.
Solution Approach 2:
The acid generator component serves as a photocopier of light energy, converting absorbed photons into acid molecules that trigger the chemical amplification process. This copying mechanism ensures that even thin films can achieve sufficient sensitivity by efficiently converting incident light into chemical signals.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition achieves increased sensitivity, improved CDU, and reduced film thickness, enabling the formation of high-quality resist patterns.
Implementation Method 1
an acid generator component (B) which generates an acid upon light exposure
Data Source
AI summary
A resist composition including a resin component having a constitutional unit derived from a compound represented by General Formula (a0-1), and a compound represented by General Formula (b0). In the formulas, W01 represents a polymerizable group; L01 represents a divalent linking group or a single bond; Ra01 and Ra02 each independently represent a hydrogen atom or a hydrocarbon group having 1 to 12 carbon atoms; Ra03 represents a fluorine atom, a fluorinated alkyl group having 1 to 6 carbon atoms, or an alkyl group having 1 to 12 carbon atoms; Ra04 represents a hydrogen atom or an alkyl group having 1 to 6 carbon atoms; m02 represents an integer of 1 to 4; X0 represents a bromine atom or an iodine atom; and nb1 represents an integer of 1 to 5.