Resist Composition Acid Diffusion Control Agent Pattern Collapse
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Solution Overview
Problem
Conventional resist compositions face challenges in forming fine patterns with good shape, particularly experiencing pattern collapse during the miniaturization process in semiconductor and liquid crystal display element production, where high resolution and sensitivity are required.
Innovation Solution
A resist composition that includes a base component and a compound represented by the general formula Z−(Mm+)1/m, where Z− is an anion with a halogen-substituted aromatic ring and Mm+ is an organic cation, which generates acid upon exposure, controlling acid diffusion and solubility changes in developing solutions to prevent pattern collapse and enhance pattern fidelity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional resist composition is used for pattern miniaturization, then lithography process can be performed, but pattern collapse occurs and pattern shape deteriorates
Solution Approach 1:
The patent introduces an acid diffusion control agent as an intermediary substance between the acid generator and the base resin. This agent controls the diffusion of acid generated during exposure, preventing excessive acid migration that causes pattern collapse. The control agent acts as a mediator to regulate acid distribution, thereby maintaining pattern shape fidelity during miniaturization while enabling the lithography process to proceed effectively.
2Measurement precision
If exposure wavelength is shortened to achieve higher resolution, then pattern resolution improves, but acid diffusion control becomes more critical to prevent pattern collapse
Solution Approach 1:
The patent addresses the contradiction by changing the chemical parameters of the resist composition, specifically by incorporating an acid diffusion control agent and carefully selecting the base resin with appropriate glass transition temperature and functional groups. These parameter changes enable the system to maintain pattern shape fidelity even when using shorter exposure wavelengths for higher resolution, as the modified composition parameters control acid diffusion more effectively.
3Object-affected harmful factors
If base resin with high glass transition temperature is used to improve pattern shape, then pattern collapse is suppressed, but lithography sensitivity may be affected
Solution Approach 1:
The patent employs a composite material approach by combining the base resin with specific glass transition temperature range (80°C to 150°C) with an acid diffusion control agent and optional crosslinking agents. This composite composition allows the system to benefit from the high glass transition temperature of the base resin for pattern collapse suppression, while the acid diffusion control agent and crosslinking components work synergistically to maintain lithography sensitivity, resolving the contradiction between pattern shape stability and lithography performance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The resist composition effectively suppresses pattern collapse and enables the formation of finer patterns with improved shape and lithography properties, ensuring high resolution and sensitivity in miniaturized semiconductor and liquid crystal display element production.
Implementation Method 1
an acid generator component that generates acid upon exposure
Implementation Method 2
an acid diffusion control agent which controls the diffusion of acid generated from the acid generator component upon exposure
Data Source
AI summary
A resist composition which generates acid upon exposure and exhibits changed solubility in a developing solution under action of acid, the resist composition including a base component (A) which exhibits changed solubility in a developing solution under action of acid, and a compound (D1) represented by general formula (d1), wherein Z− represents an anion having an aromatic ring containing a hydroxybenzoic acid skeleton, provided that at least one hydrogen atom of the aromatic ring has been substituted with a halogen atom; m represents an integer of 1 or more; and Mm+ represents an organic cation having a valency of m.Z−(Mm+)1,m (d1)