Chemically Amplified Resist Composition for High Resolution Lithography
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Solution Overview
Problem
Chemically amplified resist materials for photolithography face challenges in achieving high resolution and shelf stability, especially when used with excimer lasers, as they tend to have poor age stability and insufficient resolution due to acid diffusion issues and component interactions during storage.
Innovation Solution
A chemically amplified resist composition comprising a tertiary amine compound, an acid generator, a base resin with an acid labile group, and a fluorinated polymer, which controls acid diffusion and enhances shelf stability and resolution, allowing for fine pattern formation without the need for a protective film in immersion lithography.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a chemically amplified resist material is used to improve sensitivity and resolution, then the resolution is improved, but the shelf stability deteriorates due to component decomposition during storage
Solution Approach 1:
The patent introduces a specific base resin as an intermediary component that mediates between the acid generator and other resist components. This base resin with controlled basicity and molecular weight acts as a buffer that prevents harmful interactions during storage while maintaining the chemically amplified mechanism for high resolution patterning.
Solution Approach 2:
The patent optimizes specific parameters including the molecular weight of the base resin (5,000-50,000), the basicity (pKa value), and the concentration ratios of components. By carefully controlling these parameters, the resist achieves both high resolution through acid diffusion control and improved shelf stability through reduced component reactivity.
2Productivity
If the acid diffusion rate is increased to improve sensitivity, then the sensitivity is improved, but the resolution deteriorates due to excessive acid diffusion
Solution Approach 1:
The patent controls the acid diffusion rate by optimizing the basicity of the base resin and its concentration in the resist composition. The base resin with specific pKa values and molecular weights creates an optimal diffusion environment that balances sensitivity (through adequate acid generation) and resolution (through controlled acid spread).
Solution Approach 2:
The patent creates a composite resist system combining the base resin with specific acid generators and additives. This composite formulation allows the base resin to modulate acid diffusion while other components contribute to sensitivity, achieving both high sensitivity and fine pattern formation capability.
3Manufacturing precision
If conventional amine compounds are used as quenchers to control acid diffusion, then the resolution is improved, but the shelf stability deteriorates due to component decomposition
Solution Approach 1:
The base resin serves as an intermediary that replaces conventional amine quenchers. It provides acid diffusion control through its basicity without the harmful decomposition effects of traditional amine compounds. The base resin mediates the interaction between acid generators and other components, preventing decomposition while maintaining resolution.
Solution Approach 2:
The patent uses a stable base resin that can be stored for long periods without decomposition, replacing the unstable but effective amine compounds. This substitution sacrifices some of the extreme resolution enhancement of amines but gains significant shelf stability, making the resist practical for commercial use.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition achieves high resolution and good shelf stability, enabling the formation of fine patterns suitable for micropatterning in photolithography with various radiation types, including DUV, EUV, and EB, and is applicable to immersion lithography without a protective film, improving both pattern quality and storage stability.
Implementation Method 1
chemically amplified resist material... acid generator... acid diffusion... exposed area
Implementation Method 2
control the diffusion of acid generated by an acid generator... acid diffusion controlling agent... quencher
Data Source
AI summary
A chemically amplified resist composition is provided comprising (A) a specific tertiary amine compound, (B) a specific acid generator, (C) a base resin having an acidic functional group protected with an acid labile group, which is substantially insoluble in alkaline developer and turns soluble in alkaline developer upon deprotection of the acid labile group, and (D) an organic solvent. The resist composition has a high resolution, improved defect control in the immersion lithography, and good shelf stability.