Resist Composition Acid-Generating Agent for EUV Lithography
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The miniaturization of resist patterns in semiconductor and liquid crystal display manufacturing poses challenges in achieving high sensitivity and reducing defects, particularly when using EUV and EB lithography, as existing resist compositions struggle to maintain satisfactory lithography characteristics.
Innovation Solution
A resist composition that generates an acid upon light exposure, featuring a compound with a cation represented by General Formula (c0), which includes electron-withdrawing and electron-donating groups, improving solubility in developing solutions and reducing defects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional resist compositions are used for pattern miniaturization, then existing lithography characteristics are maintained, but sensitivity is insufficient and defects increase
Solution Approach 1:
The patent modifies the molecular structure of the acid-generating agent by introducing specific electron-withdrawing groups (X01, X02) and electron-donating groups (R01) in defined positions and quantities (nx1, nx2, n1) to optimize acid generation efficiency and control acid diffusion, thereby improving both pattern miniaturization capability and reducing defects
Solution Approach 2:
The resist composition combines multiple components including the specifically structured compound (c0), resin components, and other additives to create a composite material system that achieves both high sensitivity for fine pattern formation and low defect rates through synergistic effects
2Reliability
If conventional acid-generating agents are used, then basic lithography function is provided, but sensitivity and lithography characteristics are insufficient
Solution Approach 1:
The patent optimizes the chemical structure parameters of the acid-generating agent by controlling the types, positions, and quantities of substituent groups (X01, X02, R01, R02, R03) to enhance quantum efficiency and acid generation capability, thereby improving sensitivity while maintaining reliable lithography characteristics
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The resist composition achieves high sensitivity and improved lithography characteristics with fewer defects, enabling the formation of fine patterns with enhanced resolution and sensitivity in EUV and EB lithography.
Implementation Method 1
a resist composition which generates an acid upon light exposure
Data Source
AI summary
A resist composition which generates an acid upon light exposure and whose solubility in a developing solution is changed due to an action of an acid, the resist composition including a compound that contains a cation represented by General Formula (c0) in which X01 represents an electron-withdrawing group, X02 represents an electron-withdrawing group different from X01, R01 represents an electron-donating group, R02 and R03 each independently represents a substituent, nx1 and nx2 each independently represents an integer of 1 to 4, n1 represents an integer of 0 to 3, nx1+nx2+n1≤5 is satisfied, and n2 and n3 each independently represent an integer of 0 to 4