Chemical Amplification Resist Composition for Lithography

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Solution Overview

Problem

Current resist compositions for semiconductor lithography fail to simultaneously achieve high sensitivity, high resolution, good pattern profile, and reduced line edge roughness, especially in the ultrafine region, while also providing adequate dry etching resistance.

Innovation Solution

A resist pattern forming method using a negative chemical amplification resist composition containing a polymer compound with a specific structure, an acid generator, and a crosslinking agent, developed with an organic solvent, where the developer contains a mixture of solvents with varying boiling points to optimize solubility and volatility.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If high sensitivity is achieved by using conventional resist compositions, then processing time is reduced, but resolution deteriorates and line edge roughness worsens

Engineering Contradiction:

Improveprocessing speedVSAvoidresolution and line edge roughness

Core Design Contradiction:

ProductivityVSManufacturing precision

Solution Approach 1:

The patent uses a composite resist composition containing a phenolic resin main component, a cyclic carbonate crosslinking agent, and a base. This composite formulation enables the resist to achieve high sensitivity while maintaining high resolution and low line edge roughness through the synergistic interaction of components, resolving the trade-off between processing speed and manufacturing precision

Inventive Principle:

Principle #40Composite materials

Solution Approach 2:

The patent modifies the chemical parameters of the resist composition by introducing specific functional groups (carboxyl groups from cyclic carbonate crosslinking agents) and controlling the molecular structure of the phenolic resin. These parameter changes enable the resist to form stable crosslinked structures that provide both high sensitivity and high resolution, eliminating the conventional trade-off

Inventive Principle:

Principle #35Parameter changes

2Productivity

If high sensitivity is achieved, then processing time is shortened, but pattern profile and line edge roughness deteriorate

Engineering Contradiction:

Improveprocessing speedVSAvoidpattern profile and line edge roughness

Core Design Contradiction:

ProductivityVSShape

Solution Approach 1:

The composite resist system with phenolic resin, cyclic carbonate crosslinking agent, and base creates a chemically amplified negative resist that delivers both high sensitivity and excellent pattern profile with reduced line edge roughness, resolving the contradiction between processing speed and shape quality

Inventive Principle:

Principle #40Composite materials

Solution Approach 2:

The crosslinking reaction occurs locally in the exposed regions of the resist, creating a differentiated structure where exposed areas become insoluble while unexposed areas remain soluble. This local chemical modification enables high sensitivity while maintaining sharp pattern edges and smooth line profiles

Inventive Principle:

Principle #3Local quality

3Ease of manufacture

If conventional resist compositions are used, then ease of manufacture is maintained, but dry etching resistance is insufficient

Engineering Contradiction:

ImprovemanufacturabilityVSAvoiddry etching resistance

Core Design Contradiction:

Ease of manufactureVSStrength

Solution Approach 1:

The resist composition is pre-formulated with cyclic carbonate crosslinking agents and bases that react upon exposure to form crosslinked structures before the etching process. This preliminary crosslinking action provides enhanced dry etching resistance while maintaining ease of manufacture through a straightforward coating and exposure process

Inventive Principle:

Principle #10Preliminary action

Solution Approach 2:

The patent changes the chemical parameters of the resist by incorporating crosslinking functionality that increases the molecular weight and reduces solubility in the etched regions. This parameter change provides superior dry etching resistance without complicating the manufacturing process

Inventive Principle:

Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The method achieves high sensitivity, high resolution, excellent pattern profile, reduced line edge roughness, and improved dry etching resistance, effectively addressing the limitations of existing technologies.

Implementation Method 1

a compound capable of generating an acid upon irradiation with actinic rays or radiation

Methodology Applied

Scientific EffectPhotochemical reaction: Photopolymerisation

Implementation Method 2

a crosslinking agent capable of crosslinking the polymer compound (A) by an action of an acid

Methodology Applied

Scientific EffectCrosslinking reaction: Photopolymerisation

Data Source

PatentUS8889339B2Resist pattern forming method, resist pattern, crosslinkable negative chemical amplification resist composition for organic solvent development, resist film and resist-coated mask blanks

Publication Date: 2014.11.18 FUJIFILM CORP

AI summary

A resist pattern forming method contains: in the following order, (1) forming a resist film by using a negative chemical amplification resist composition containing (A) a polymer compound having a repeating unit represented by formula (1) as defined in the specification, (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation and (C) a crosslinking agent capable of crosslinking the polymer compound (A) by an action of an acid; (2) exposing the resist film, so as to form an exposed resist film; and (4) developing the exposed resist film by using a developer containing an organic solvent.