Resist Composition Acid Generator for EUV Lithography
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Solution Overview
Problem
Conventional resist compositions containing onium salt acid generators face difficulties in achieving desired resist pattern shapes and lithography properties, especially when high sensitivity to exposure light sources like EUV is required, leading to challenges in forming fine resist patterns with high resolution, low roughness, and adequate contrast.
Innovation Solution
A novel resist composition is developed, incorporating a compound with a specific anion and cation moiety structure that generates an acid upon exposure, altering solubility in developing solutions, thereby enhancing lithography properties and enabling the formation of precise resist patterns. The composition includes a base component and a compound represented by specific general formulas, which are used to form a resist film and create patterns through selective exposure and development.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional onium salt acid generators are used in resist compositions, then the resist film can be formed and developed, but the lithography properties (resolution, contrast, roughness) are insufficient and desired resist pattern shapes cannot be achieved
Solution Approach 1:
The patent changes the chemical parameters of the acid generator by using a specific compound structure (formula 1) with a cation containing a six-membered aromatic ring and a nitrogen-containing six-membered ring, replacing conventional onium salts. This structural parameter change results in improved acid generation characteristics that enhance resolution, contrast, and pattern shape fidelity while reducing roughness.
Solution Approach 2:
The patent creates a composite resist composition by combining the base resin (component A) with the specifically structured acid generator compound (component B). This composite approach allows the synergistic interaction between the base material and the optimized acid generator to achieve superior lithography properties that neither component could provide alone.
2Measurement precision
If high sensitivity to exposure light sources like EUV is required, then fine resist patterns can be formed, but conventional resist compositions fail to achieve desired resolution and contrast
Solution Approach 1:
The patent optimizes the acid generator's molecular structure parameters to enhance its responsiveness to EUV exposure. The specific formula (1) with its aromatic ring and nitrogen-containing ring configuration enables more efficient acid generation under EUV irradiation, improving both sensitivity and resolution simultaneously.
Solution Approach 2:
The patent replaces the conventional onium salt acid generation mechanism with a photo-induced acid generation mechanism using the specifically structured compound. This substitution enables more effective utilization of EUV energy, converting exposure light into acid more efficiently and achieving better lithography performance at high sensitivity conditions.
3Manufacturing precision
If conventional acid generators are used, then the resist film can be developed, but the contrast and roughness of the formed patterns are inadequate
Solution Approach 1:
The patent modifies the acid generator's chemical parameters by incorporating specific aromatic and nitrogen-containing ring structures. This changes the acid generation kinetics and distribution, resulting in improved pattern contrast and reduced surface roughness through more uniform and controlled acid action during development.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The novel resist composition achieves improved lithography properties, including high sensitivity, resolution, and contrast, enabling the formation of fine resist patterns with reduced roughness, effectively addressing the limitations of conventional compositions.
Implementation Method 1
an acid generator component that generates an acid upon exposure
Implementation Method 2
the polarity of the base resin is increased due to the action of the acid
Data Source
AI summary
A resist composition containing a compound represented by the general formula (bd1-1), (bd1-2) or (bd1-3); in the formula, Rx1 to Rx4 represent a hydrocarbon group or a hydrogen atom or may be mutually bonded to form a ring structure; Ry1 to Ry2 represent a hydrocarbon group or a hydrogen atom or may be mutually bonded to form a ring structure, Rz1 to Rz4 represent a hydrocarbon group or a hydrogen atom or may be mutually bonded to form a ring structure. At least one of Rx1 to Rx4, Ry1 to Ry2 and Rz1 to Rz4 has an anion group, M1m+ represents a sulfonium cation having a sulfonyl group, R001 to R003 each independently represent a monovalent organic group; provided that at least one of R001 to R003 is an organic group having an acid dissociable group; and M3m+ represents an m-valent organic cation having an electron-withdrawing group.