Resist Composition with Fluorinated Acid Generator for EUV Lithography
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Solution Overview
Problem
Existing resist compositions face challenges in achieving desired resist pattern shapes and lithography characteristics, particularly when enhanced sensitivity to exposure light sources like EUV is required, leading to difficulties in forming precise patterns with high resolution and reduced roughness.
Innovation Solution
A resist composition that includes a base material component and a novel compound with an anion and cation moiety, represented by Formula (bd1), which generates acid upon exposure, altering solubility in developing solutions to form improved resist patterns with enhanced lithography characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If conventional resist compositions are used to achieve high sensitivity to EUV exposure light sources, then sensitivity is improved, but lithography characteristics such as pattern shape precision and roughness deteriorate
Solution Approach 1:
The patent modifies the chemical structure of the acid generator component by introducing specific fluorinated aryl groups and adjusting molecular parameters to optimize the balance between sensitivity and lithography characteristics. The compound of formula (bd1) with specific Rbd1-Rbd3 aryl groups and fluorinated alkyl substituents changes the chemical parameters of the resist system to achieve both high EUV sensitivity and precise pattern formation with reduced roughness
Solution Approach 2:
The resist composition employs a composite material system combining a base resin component with a specifically designed acid generator compound of formula (bd1). This composite approach integrates different functional components where the base resin provides structural foundation and the novel acid generator compound enhances sensitivity while maintaining pattern precision, resolving the contradiction between sensitivity and lithography characteristics
2Manufacturing precision
If conventional acid generator components are used in chemically amplified resist compositions, then basic resist functionality is achieved, but high resolution pattern formation with reduced roughness cannot be achieved
Solution Approach 1:
The acid generator compound of formula (bd1) utilizes parameter changes through specific molecular design including fluorinated alkyl groups bonded to carbon atoms adjacent to sulfur atoms, with at least two such fluorinated groups per aryl group. These parameter changes in molecular structure directly improve pattern resolution and reduce roughness while maintaining reasonable compositional complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The resist composition achieves improved lithography characteristics, including reduced roughness and high sensitivity, enabling the formation of precise resist patterns suitable for advanced semiconductor and liquid crystal display element production.
Implementation Method 1
a compound (BD1) including an anion moiety and a cation moiety and represented by Formula (bd1)... which generates acid upon exposure
Data Source
AI summary
A resist composition containing a base material component of which solubility in a developing solution is changed due to an action of an acid and a compound represented by Formula (bd1); in the formula, Rbd1 to Rbd3 each independently represent an aryl group which may have a substituent, provided that one or more of Rbd1 to Rbd3 are aryl groups having a fluorinated alkyl group which may have a substituent, and at least one of the fluorinated alkyl groups which may have a substituent in these aryl groups is bonded to a carbon atom adjacent to a carbon atom that is bonded to a sulfur atom in the formula, and a total number of the fluorinated alkyl groups which may have a substituent is 2 or more; X− represents a counter anion.