Resist Composition with Fluorinated Acid Generator for EUV Lithography
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Solution Overview
Problem
Current resist compositions with onium salt-based acid generators face challenges in achieving desired lithography characteristics, such as reduced roughness and precise pattern formation, especially when used with electron beams or EUV, which are essential for miniaturizing resist patterns to tens of nanometers.
Innovation Solution
A resist composition that includes a base material component whose solubility changes with acid action, an acid generator component that generates acid upon exposure, and an organic acid with a carboxy group, specifically containing a compound represented by Formula (b1), which improves lithography characteristics by altering solubility in developing solutions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If onium salt-based acid generators are used in resist composition, then sensitivity to exposure light sources is improved, but lithography characteristics such as pattern shape precision and roughness are degraded
Solution Approach 1:
The patent introduces a specific base material component as an intermediary substance that mediates between the acid generator and the developing solution. This base material (Formula A) with specific functional groups acts as a buffer and reaction medium that controls acid diffusion and enhances the precision of pattern formation while maintaining high sensitivity to exposure light sources
Solution Approach 2:
The patent changes the chemical parameters of the resist composition by specifying exact structural formulas and molecular weight ranges for the base material component. By controlling parameters such as the structure of Formula (A), molecular weight (10,000-100,000), and the ratio of base material to acid generator, the patent optimizes both sensitivity and pattern precision
2Use of energy by moving object
If onium salt-based acid generators are used in resist composition, then sensitivity to exposure light sources is improved, but roughness of resist patterns is increased
Solution Approach 1:
The base material component (Formula A) serves as a mediator that controls the interaction between generated acid and the polymer structure. This intermediary substance ensures uniform acid distribution and controlled solubility changes, resulting in smoother resist pattern surfaces with reduced roughness while preserving high exposure sensitivity
Solution Approach 2:
The patent creates a composite resist composition by combining the specifically structured base material (Formula A) with the acid generator component. This composite material integrates the light-sensitive properties of the acid generator with the structure-controlling properties of the base material, achieving both high sensitivity and low roughness
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The resist composition enhances lithography characteristics by reducing roughness and enabling the formation of precise resist patterns with improved shape and sensitivity, addressing the limitations of existing compositions with onium salt-based acid generators.
Implementation Method 1
an acid generator component (B) which generates an acid upon exposure
Data Source
AI summary
A resist composition which generates an acid upon exposure and whose solubility in a developing solution is changed due to an action of the acid, the resist composition including a base material component whose solubility in a developing solution is changed due to the action of an acid, an acid generator component which generates an acid upon exposure, and an organic acid which contains at least one carboxy group, in which the acid generator component contains a compound represented by formula (b1) in which R2011 to R2031 represent an aryl group, an alkyl group, or an alkenyl group. R2011 to R2031 have a total of four or more substituents containing fluorine atoms, Xn− represent an n-valent anion, and n represents an integer of 1 or greater.