Resist Composition for High Resolution Lithography
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Solution Overview
Problem
Current resist materials for advanced lithography techniques, such as those using KrF and ArF excimer lasers, face challenges in achieving high resolution and minimizing pattern roughness, which affects the formation of fine semiconductor devices and liquid crystal display elements.
Innovation Solution
A resist composition comprising a base component with specific structural units that change solubility in developing solutions under acid action, combined with an acid generator component that produces acid upon exposure, allowing for precise control of pattern formation through selective exposure and development.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional resist materials are used for advanced lithography, then the basic pattern formation is achieved, but the resolution and pattern roughness are insufficient
Solution Approach 1:
The patent modifies the chemical structure of the base component by introducing specific structural units (formula a0) with adjustable parameters R, X, Y, R1, R2, R3, R4, and n to optimize solubility changes upon acid generation, thereby improving resolution and reducing pattern roughness while maintaining reliable pattern formation
Solution Approach 2:
The patent creates a composite resist material combining a base component with specific structural units (a0) and an acid generator component (B1) with formula (b0-1) or (b0-2), where the synergistic interaction between these components achieves high resolution and low roughness while ensuring pattern formation reliability
2Quantity of substance
If the solubility of the base component is increased in developing solution, then the sensitivity is improved, but the pattern roughness increases
Solution Approach 1:
The patent optimizes the solubility parameter by carefully designing the base component structure (formula a0) to achieve optimal solubility in developing solution that provides high sensitivity while controlling pattern roughness through precise structural parameter adjustment
3Measurement precision
If the exposure energy is increased to improve resolution, then the pattern definition is enhanced, but the pattern roughness and defects increase
Solution Approach 1:
The patent modifies the resist material parameters by introducing structural units (a0) that respond optimally to exposure energy, enabling high pattern definition with reduced roughness and defects through controlled chemical amplification and solubility changes
Solution Approach 2:
The patent converts the potential harm of high exposure energy (which can cause roughness and defects) into a benefit by designing the base component (a0) and acid generator (B1) to efficiently utilize the exposure energy for controlled acid generation, achieving sharp pattern definition without excessive roughness
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The resist composition enables the formation of resist patterns with improved lithography properties, including high resolution and reduced roughness, enhancing the quality of semiconductor and liquid crystal display elements by ensuring accurate and uniform pattern formation.
Implementation Method 1
an acid generator component (B1) including a compound represented by general formula (b0-1) or (b0-2)
Data Source
AI summary
A resist composition including:a base component (A) that exhibits changed solubility in a developing solution by action of acid; andan acid generator component (B) that generates acid upon exposure,wherein the base component (A) includes a resin component (A1) containing a structural unit (a0) represented by general formula (a0-1) shown below or general formula (a0-2) shown below; andthe acid generator component (B) includes an acid generator (B1) including a compound represented by general formula (b0-1) or (b0-2) shown below.