Chemically-Amplified Negative Resist Composition for Low LWR
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Solution Overview
Problem
Current chemically-amplified negative resist compositions face challenges in achieving high sensitivity, low line width roughness (LWR), and critical dimension uniformity (CDU) while maintaining a favorable pattern profile, particularly for next-generation lithography nodes, due to issues with acid diffusion and solubility in alkaline developers.
Innovation Solution
A chemically-amplified negative resist composition incorporating an acid generator with a sulfonium or iodonium salt of iodinated benzoyloxy group-containing fluorinated sulfonic acid, combined with a specific base polymer containing aromatic rings and cyclic structures, which reduces acid diffusion and enhances etching durability and solubility, thereby improving sensitivity and pattern resolution.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the acid diffusion distance is reduced to lower LWR, then the line width roughness is reduced, but the sensitivity is lowered
Solution Approach 1:
The patent applies local quality by introducing a quencher component specifically positioned to suppress acid diffusion in localized regions. The quencher has a basic functional group that locally neutralizes diffusing acid, creating a gradient of acid suppression that maintains high sensitivity while reducing LWR through controlled local acid diffusion distance reduction.
Solution Approach 2:
The quencher acts as an intermediary substance between the acid generator and the base polymer. It mediates the acid diffusion process by providing basic functional groups that selectively interact with and neutralize excess acid, thereby controlling acid diffusion distance without directly affecting the primary acid generation mechanism and maintaining sensitivity.
2Manufacturing precision
If a quencher is added in a larger amount to reduce LWR, then the line width roughness is reduced, but the sensitivity is lowered
Solution Approach 1:
The patent optimizes the quencher content within a specific range (0.1-10 parts by mass per 100 parts base polymer) to achieve the desired balance. By precisely controlling the quencher concentration parameter, the acid diffusion is sufficiently suppressed to reduce LWR while maintaining enough acid generation for high sensitivity, avoiding the trade-off that occurs with excessive quencher addition.
Solution Approach 2:
The patent applies partial action by using a moderate amount of quencher (0.1-10 parts by mass per 100 parts base polymer) rather than excessive quantities. This partial addition of quencher provides sufficient acid diffusion control to reduce LWR while avoiding the sensitivity loss that would result from over-quenching, achieving optimal balance through controlled partial neutralization.
3Length of moving object
If the film thickness is reduced to achieve miniaturization, then the pattern size is reduced, but the LWR and CDU increase
Solution Approach 1:
The patent applies local quality by introducing a quencher component specifically positioned to suppress acid diffusion in localized regions of the thin resist film. The quencher's basic functional groups locally neutralize diffusing acid, creating a gradient of acid suppression that maintains high sensitivity while reducing LWR through controlled local acid diffusion distance reduction.
Solution Approach 2:
The patent creates a composite resist system combining the base polymer, acid generator, and quencher components. This composite material structure allows the quencher to specifically address acid diffusion issues in thin films, enabling miniaturization while maintaining low LWR and CDU through the synergistic interaction of multiple functional components.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition achieves high sensitivity, low LWR, and low CDU with reduced top loss and improved pattern profile, making it suitable for fine patterning with electron beam and extreme ultraviolet ray lithography.
Implementation Method 1
an acid generator containing an onium salt (s) shown by the following formula(e) (A-1) and/or (A-2)... an acid is generated from an exposed portion
Implementation Method 2
a base polymer containing repeating units shown by the following formulae (B1) and (B2)... a base polymer is insolubilized by the action of this acid
Data Source
AI summary
A chemically-amplified negative resist composition includes: (A) an acid generator containing an onium salt (s) shown by the following formula(e) (A-1) and/or (A-2); and (B) a base polymer containing repeating units shown by the following formulae (B1) and (B2). Thus, the present invention provides: a chemically-amplified negative resist composition which provides a pattern with high sensitivity, low LWR and CDU, and favorable profile; and a resist patterning process using the composition.