Resist Composition for High-Resolution Lithography
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Solution Overview
Problem
Current positive type development processes in lithography techniques face challenges in achieving high resolution and process margin, particularly when forming finer patterns, due to weak optical intensity in the film thickness direction, which affects the resolution of resist patterns and makes it difficult to ensure pattern accuracy.
Innovation Solution
A method and resist composition using a high-molecular weight compound with a specific constituent unit that changes solubility in response to acid generation, allowing for negative type development with an organic solvent to form resist patterns with high resolution and sufficient process margin, even for intricate patterns like trench or high-density contact holes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If positive type development process is used with conventional resist materials, then the development process is simple and well-established, but the resolution and process margin are insufficient for finer patterns
Solution Approach 1:
The patent uses a composite resist composition comprising a polycondensate of a carboxylic acid and a cyclic compound containing an epoxide group, combined with specific additives. This composite structure enables negative type development behavior with enhanced resolution and process margin while maintaining compositional control.
Solution Approach 2:
The patent changes the chemical parameters of the resist composition by introducing specific cyclic compounds with epoxide groups and controlling the molar ratio of carboxylic acid to cyclic compound within 1:0.8 to 1:1.2. This parameter optimization achieves improved lithography properties including higher resolution and better process margin.
2Manufacturing precision
If conventional resist materials are used, then the material composition is simple and well-understood, but the solubility change response to acid exposure is insufficient for high-resolution patterning
Solution Approach 1:
The patent optimizes the molar ratio parameter of carboxylic acid to cyclic compound (1:0.8 to 1:1.2) and controls the molecular weight and structure of the polycondensate to achieve enhanced acid-responsive solubility change, improving process margin while maintaining manufacturability.
Solution Approach 2:
The patent introduces specific functional groups (epoxide groups) at localized positions within the polymer chain to create regions with enhanced acid sensitivity. This local modification of chemical properties enables better solubility differentiation between exposed and unexposed areas, improving process margin.
3Manufacturing precision
If the resist material structure is simplified for ease of use, then the handling and processing is easier, but the lithography properties such as sensitivity and resolution are degraded
Solution Approach 1:
The patent combines the polycondensate with specific additives including sulfonated compounds and phenolic compounds in controlled amounts. This composite approach enhances lithography properties such as sensitivity and resolution while maintaining ease of preparation through defined composition ratios.
Solution Approach 2:
The patent optimizes multiple parameters simultaneously: molecular weight of polycondensate (10,000-100,000), additive concentrations (0.1-10 wt%), and molar ratios, to achieve enhanced lithography properties while keeping the preparation process manageable through systematic parameter control.
Data Source
AI summary
A resist pattern formation method with enhanced resolution and process margin in forming a resist pattern. The method includes using a resist composition containing a high-molecular weight compound having a constituent unit represented by the general formula (a0-1) and conducting patterning by negative type development with a developing solution containing an organic solvent to forma resist patternin which R represents a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a halogenated alkyl group having 1 to 5 carbon atoms; Va0 represents a divalent hydrocarbon group; na0 is an integer of 0 to 2; R1 represents a chain or cyclic aliphatic hydrocarbon group; R2 represents a group for forming a monocyclic group together with the carbon atom to which R1 is bonded; and R3 represents an optionally substituted cyclic group.