Resist Composition for Semiconductor Lithography CDU
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Solution Overview
Problem
Conventional resist compositions used in photolithographic techniques for semiconductor microfabrication often fail to achieve satisfactory critical dimension uniformity (CDU) in resist patterns, leading to defects.
Innovation Solution
A resist composition comprising a resin with specific structural units represented by formulas (aa) and (ab), combined with an acid generator, which is applied to a substrate, dried, exposed, and developed to produce a resist pattern with improved CDU and reduced defects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional resist composition containing polymer obtained by polymerizing compounds (u-A), (u-B), (u-C), and (u-D) is used, then the resist composition can be formed, but the critical dimension uniformity (CDU) of the obtained resist pattern is not satisfied
Solution Approach 1:
The patent changes the chemical structure parameters of the resin by specifying particular compounds for (u-A), (u-B), (u-C), and (u-D) with defined structural features including carbonyl groups, oxy groups, and specific hydrocarbon chains. This parameter optimization resolves the contradiction by achieving both good CDU and reduced defects through precise molecular structure design
Solution Approach 2:
The patent creates a composite resist composition by combining multiple polymers with specific structures, an acid generator, and a solvent. This composite approach allows optimization of each component's properties to achieve excellent CDU and minimal defects that cannot be achieved with single-component systems
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The resist composition effectively produces resist patterns with excellent critical dimension uniformity and minimal defects, enhancing the precision and quality of semiconductor microfabrication.
Implementation Method 1
A resist composition used for such photolithographic technique contains a resin which is insoluble or poorly soluble in aqueous alkali solution, but becomes soluble in aqueous alkali solution by the action of acid and an acid generator
Implementation Method 2
a resin having a polymer obtained by polymerizing a compound represented by the formula (u-A) and a compound represented by the formula (u-B)
Data Source
AI summary
A resist composition contains a resin having a structural unit represented by the formula (aa) and a structural unit represented by the formula (ab); and an acid generator,wherein Raa1 represents a hydrogen atom and a methyl group; Aaa1 represents an optionally substituted C1 to C6 alkanediyl group etc.; Raa2 represents an optionally substituted C1 to C18 aliphatic hydrocarbon group; Rab1 represents a hydrogen atom and a methyl group; Aab1 represents a single bond, an optionally substituted C1 to C6 alkanediyl group etc.; W1 represents an optionally substituted C4 to C36 alicyclic hydrocarbon group; n represents 1 or 2; Aab2 in each occurrence independently represents an optionally substituted C1 to C6 aliphatic hydrocarbon group; Rab2 in each occurrence independently represents a C1 to C12 fluorinated alkyl group.