Chemically Amplified Resist Composition for Liquid Immersion Lithography Defect Suppression
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Solution Overview
Problem
In liquid immersion lithography, defects are formed due to residual fluid droplets on the resist film, particularly during post-exposure baking, and existing chemically amplified positive resist compositions do not effectively suppress these defects.
Innovation Solution
A chemically amplified positive resist composition is developed, comprising a resin (A) without fluorine atoms and a resin (B) with fluorine-containing groups, along with specific structural units and an acid generator, optimized to form a resist film with a higher receding contact angle for improved solubility and defect suppression.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a chemically amplified positive resist composition is used in liquid immersion lithography, then pattern formation capability is improved, but defect formation due to residual fluid droplets increases
Solution Approach 1:
The patent modifies the chemical composition parameters of the resist, specifically incorporating resin (B) with fluorine-containing groups and controlling the content of structural unit (b1) to less than 10 mol%, which changes the surface properties and receding contact angle of the resist film to reduce defect formation
Solution Approach 2:
The patent uses a composite resist system combining resin (A) without fluorine atoms and resin (B) with fluorine-containing groups, where each resin contributes different properties: resin (A) provides pattern formation capability while resin (B) provides defect suppression through higher receding contact angle
2Object-affected harmful factors
If the receding contact angle of the resist film is increased to suppress defect formation, then solubility in developing solution is improved, but pattern profile quality may deteriorate
Solution Approach 1:
The patent optimizes the content of structural unit (b1) to a specific range (less than 10 mol% but preferably 0.5-10 mol%) to achieve the right balance between receding contact angle and pattern profile, demonstrating that precise parameter control can simultaneously improve multiple properties
Solution Approach 2:
The patent introduces different structural units with specific functions at different locations within the resin molecule: structural unit (b1) with acid-labile groups for controlled solubility, structural unit (b2) with fluorine-containing groups for high receding contact angle, and structural units (b3) or (b4) for additional functional properties, allowing each part to contribute to different performance aspects
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition achieves excellent resist performance, including good pattern profiles and solubility in developing solutions, effectively reducing defects in liquid immersion lithography by forming a resist film with a higher receding contact angle.
Implementation Method 1
chemically amplified positive resist composition
Implementation Method 2
structural unit (a1) having an acid-labile group in a side chain
Implementation Method 3
receding contact angle of the resist film
Implementation Method 4
receding contact angle of the resist film
Data Source
AI summary
The present invention provides a chemically amplified resist composition comprising:a resin (A) which contains no fluorine atom and a structural unit (a1) having an acid-labile group in a side chain,a resin (B) which contains a structural unit (b2) having a fluorine-containing group in a side chain and at least one structural unit selected from the group consisting of a structural unit (b1) having an acid-labile group, a structural unit (b3) having a hydroxyl group and a structural unit (b4) having a lactone structure in a side chain, andan acid generator, wherein the content of the structural unit (b1) based on the total units of the resin (B) is less than 10 mol %.