Resist Composition Dual Acid Generators for Lithography
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Solution Overview
Problem
Existing resist compositions struggle to achieve high sensitivity, good resist pattern shape, and excellent depth of focus (DOF) margin simultaneously, particularly as lithography techniques advance and pattern miniaturization increases.
Innovation Solution
A resist composition that generates an acid upon exposure, comprising a base material component (A) whose solubility changes with acid action and an acid generating agent component (B) containing a first and second acid generating agent. The first agent includes a compound represented by general formula (b1-1), and the second agent includes a compound represented by general formula (b2-1), both promoting high sensitivity and pattern quality.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional resist composition with a single acid generating agent is used, then the composition is simple to manufacture, but it cannot achieve high sensitivity, good resist pattern shape, and excellent DOF margin simultaneously
Solution Approach 1:
The patent combines multiple acid generating agents (first acid generating agent and second acid generating agent) into a single resist composition. This merging of multiple functional components allows the composition to achieve high sensitivity, good resist pattern shape, and excellent DOF margin simultaneously, resolving the contradiction between performance reliability and composition simplicity.
Solution Approach 2:
The resist composition uses a composite structure containing different types of acid generating agents with complementary functions. The first acid generating agent (compound b1-1) and second acid generating agent (compound b2-1) work synergistically to provide both high sensitivity and excellent lithography properties, demonstrating the application of composite material principles to resolve the technical contradiction.
2Manufacturing precision
If wavelength shortening is applied to achieve pattern miniaturization, then resolution improves, but the resist material requires more complex properties to maintain sensitivity and DOF margin
Solution Approach 1:
The patent changes the chemical parameters of the resist material by incorporating specific acid generating agents (compounds of formulas b1-1 and b2-1) that are optimized for short-wavelength lithography. This parameter change allows the resist to maintain high sensitivity and excellent DOF margin while achieving the resolution required for pattern miniaturization.
Solution Approach 2:
The resist composition employs a composite material strategy by combining multiple acid generating agents with different chemical characteristics. This composite approach enables the material to satisfy the complex requirements imposed by wavelength shortening, including high sensitivity, good pattern shape, and excellent DOF margin, without requiring overly complex material properties.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The resist composition achieves high sensitivity, excellent resist pattern shape, and improved DOF margin, effectively addressing the limitations of existing technologies in advanced lithography applications.
Implementation Method 1
an acid generating agent component (B) that generates an acid when the acid generating agent component (B) is exposed
Data Source
AI summary
A resist composition that generates an acid via light exposure, and whose solubility in a liquid developer changes through the action of the acid. The resist composition includes a base material component whose solubility in the liquid developer changes through the action of the acid, and an acid generating agent component that generates the acid via light exposure. The acid generating agent component includes a first acid generating agent and a second acid generating agent. The first acid generating agent and second acid generating agent include compounds represented by particular general formulas.